Abstract: The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: (a) heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; (b) mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and (c) heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor, wherein, in the step (c), in order for liquefied selenium not to be condensed on the specimen which is loaded at the room temperature and is not yet heated, the temperature of the element selenium and the specimen loaded in the chamber are individually controlled, so that the selenium vapor pressure of an inner space of the chamber does not exceed a

Abstract: The wafer probe station includes: a plurality of the pressure sensors; a tilt correction unit which is constructed with a plurality of actuators, a plurality of displacement sensors which are disposed at positions adjacent to the corresponding actuators and a microcomputer; and a control unit which allows the wafer to be come in contact with the probe card by lifting up a Z-axis stage by a predetermined overdriving amount, extracts the pressure values of the installation positions from the pressure sensors, calculates driving amounts of the actuators of the tilt correction unit by using the pressure values so that a uniform load is applied to the chuck, calculates X and Y directional displacement values w occurring according to a change in a tilt of the chuck, lifts down the Z-axis stage, and after that, corrects an eccentric load of the chuck by driving the actuators of the tilt correction unit according to the driving amounts, and controls movement of the XY-axis stage by using the X and Y directional displ

Abstract: Provided is an error measurement and correction device of a stage of a wafer prober. The error measurement and correction device includes a jig member, a vision module, a central processing unit, and an interface unit. The jig member is disposed on a chuck on the stage, and the vision module is disposed on an upper plate of the wafer prober disposed at a position facing the jig member to enable the camera of the vision module to acquire images of the patterns of the jig member and transmits the acquired images to the central processing unit. The central processing unit acquires images of the patterns of the jig member disposed on the chuck by using the vision module to extract reference position information, moves the stage at a unit interval of the pattern, acquires images of the patterns of the jig member again to extract measured position information, and generates and stores mapping data by calculating difference between the measured position information and the reference position information.

Abstract: An apparatus for controlling the Z axis position of a wafer prober includes a first sensor unit including a plurality of pressure sensors distributed and installed between a Z axis support plate, for supporting a Z axis transferring unit and a Z axis base. Actuators are distributed and installed between the Z axis support plate and the Z axis base, and lift up or lower the Z axis support plate. A driving unit drives the actuators. A control module controls the driving unit to drive the actuators in response to pieces of sensed data. The control module drives the actuators when a difference between the pieces of sensed data is greater than a preset difference limit value, thus enabling the chuck plate to be maintained in a horizontal state.