Abstract: A power electronic assembly with a sleeve that has a virtual longitudinal axis and a circuit carrier. The sleeve has a tube-shaped plug-in section which runs around the longitudinal axis, and a first base section arranged at a first end of the plug-in section and runs around the longitudinal axis and extends away from the longitudinal axis. The first base section has at its end a flat first contact surface which runs around the longitudinal axis in a closed manner and which runs in a first plane which runs perpendicular to the longitudinal axis. The first base section has an edge surface which runs around the longitudinal axis in a closed manner and the first base section has a second contact surface which runs from the first contact surface and away from the first plane in the direction towards the edge surface.

Abstract: The invention relates to a power semiconductor device having a pin element which passes through a housing opening, an elastic sealing device which is arranged between a housing opening wall of the housing, where the housing opening wall delimits the housing opening and encircles the pin element. The pin element runs through the sleeve and through a sealing device opening of the sealing element. The sealing device is not connected in a materially bonded manner to the sleeve, to the housing opening wall and to the pin element and the sealing device seals off the housing opening wall from the sleeve and seals off the sleeve from the pin element. A crosslinked potting compound is arranged on the sealing device. The crosslinked potting compound is connected in a materially bonded manner to the sleeve, to the housing opening wall and to the pin element and the potting compound seals off the housing opening wall from the sleeve and seals off the sleeve from the pin element.

Abstract: A connecting device which can be arranged relative to a photovoltaic module for the purpose of electrically connecting a plurality of photovoltaic modules to one another and/or to an inverter device comprising at least a housing. The housing includes a first housing element and a second housing element; first connection devices for electrical connection to the photovoltaic module arranged in the first housing element; and second connection devices for electrical connection to a further connecting device or to the inverter device of a semiconductor circuit having at least one semiconductor component arranged in the second housing element. The connecting device further includes first contact devices, which are associated with the first housing element, and second contact devices, which are associated with the second housing element. The semiconductor circuit arrangement can be electrically connected to the first connection devices.

Abstract: A power semiconductor module in a pressure contact embodiment and a method for producing such modules, for disposition on a cooling component. Load terminals of the modules are formed as metal molded bodies having at least one contact element, one flat portion, and contact feet emanating therefrom. Each flat portion is disposed parallel to, and spaced from, the surface of the substrate. The contact feet extend from the flat portion to the substrate. An elastic intermediate layer is disposed between adjacent load terminals, in the region of the respective flat portions, and the intermediate layer and load terminals form a stack.

Abstract: The present invention relates to a contact maker for the gate terminal of power semiconductor components in disc cells and power semiconductor modules. Disposed above the power semiconductor component is a shaped member that incorporates in the region of the gate terminal a recess, and this recess, in turn, also incorporates a counter-support. The contact maker consists of a contact spring incorporating a pin-like extension at the end of the spring that contacts the gate terminal, and incorporating a connection created via a shaped metal element to a connecting cable for the external connection at the other end of the spring, and of an insulating sleeve with a contact spring disposed therein. The insulating sleeve itself has at least one locking projection, which, together with the counter-support of the shaped member, forms a snap-lock connection.

Abstract: The invention relates to an integrated circuit configuration proposed for the actuation of power switches disposed in bridge connection and an associated method. The primary side of this circuit configuration is herein connected with the secondary side, which actuates the TOP switch, via a level shifter. The circuit configuration comprises furthermore between the primary side and a secondary side a diode for error status conveyance from the secondary side to the primary side. The anode-side terminal of the diode is connected with the primary side and its cathode-side terminal with the secondary side of the driver circuit. The primary side applies a voltage to this diode. In the presence of error-free operation the secondary side applies level “high” (Vd) to the cathode of the diode and, in the presence of faulty operation, level “low” (Vg).

Abstract: A power semiconductor module, having a metal base plate for mounting on a heat sink. The module comprises a framelike housing, a cover, terminal elements, leading to the outside of the housing, for load contacts and auxiliary contacts, and having at least one electrically insulating substrate, disposed inside the housing. The substrate includes an insulating body and a plurality of metal connecting tracks, electrically insulated from one another. Power semiconductor components are located on the connecting tracks and connected to these connecting tracks via appropriate circuitry. The base plate has a stiffening structure, which extends near and along a side of the base plate, and in the longitudinal direction of the base plate. The stiffening structure is formed of the base plate material itself by deformation and protrudes out of the upper surface of the base plate.

Abstract: A switching voltage converter in half bridge topology operates in switching mode with variable locking, consisting of two power switches, and one control circuit. The TOP switch is realized by one or more n-channel transistors. The BOT switch is realized by one or more p-channel transistors. The output Upwm of the half bridge is selected as a reference potential, which is not constant and varies during operation, for the control circuit and supply voltage Ubtop, Ubbot of the drivers of the TOP and BOT switch.