Abstract: A switchgear cabinet comprising a cabinet frame, first and second current converter devices, and an electrical connection clamping device. The first current converter device has first DC voltage positive and negative potential connection elements. The second current converter device has second DC voltage positive and negative potential connection elements. The electrical connection clamping device has an electrically conductive first clamping element and an electrically conductive second clamping element which is electrically insulated from the electrically conductive first clamping element, and a pressure-generating device which generates a pressure that pushes the second clamping element towards the first clamping element. The first clamping element is mechanically connected to the cabinet frame by an electrically non-conductive insulation body such that the first clamping element is electrically insulated from the cabinet frame.

Abstract: A housing for power semiconductor modules with a base plate or for direct mounting on a heat sink. The housing (10) surrounds an electrically insulating substrate (40) with metal connection tracks (41) disposed thereon. The metal connection tracks are insulated from one another and have power semiconductor components (50) disposed on them. The housing has a cap (14) and at least one framelike housing part (12) forming the side walls thereof. This housing part (12) includes a main frame (120) and at least one locking frame (130). The main frame (120) has guides (122, 128) for receiving connection elements (30, 32). The locking frame (130) is disposed relative to the main frame (120) such that it rests at least in part on the connection tabs (310, 320) of the connection elements (30, 32), in order to prevent movemnt of the connection elements toward the substrate (40).

Abstract: A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.