Abstract: A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Abstract: A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically insulating material, the spacer being arranged at least partly between the capacitor and the metal shaped body in the depression; and an electrically insulating potting material provided in the depression, wherein the potting material fixes the capacitor in the depression so that the capacitor does not touch the metal shaped body.

Abstract: A Schottky diode and a method for making one. The method includes the following steps: providing a semiconductor base body, preferably in the form of a wafer, having a high dopant concentration and having a first main surface, which forms the first electrical contact surface of the Schottky diode; epitaxially depositing a semiconductor layer having the same conductivity and a lower dopant concentration on that surface of the semiconductor base body which lies opposite the first main surface; arranging a first metal layer on the semiconductor layer with the formation of a Schottky contact between the first metal layer and the semiconductor layer; connecting a planar contact body to the first metal layer by means of a connecting means; forming at least one individual Schottky diode; and arranging a passivation layer in the edge region of the at least one Schottky diode.

Abstract: Apparatus and a method for operating the apparatus to remove at least one chip-type semiconductor component from an adhesive film. The method comprises: arranging a lifting device with respect to the film, wherein a contact region of the lifting device bears against a second main surface of the film, opposite a chip-type semiconductor component that is arranged on a first main surface and is to be lifted off. Then, applying either a constant vacuum to a plurality of suction cutouts of the lifting device, by means of an assigned vacuum regulating device, or applying different values of the vacuum for different suction cutouts or groups of suction cutouts. Next, partially deforming the film in the contact region by using lifting means arranged in assigned cutouts of the lifting device to lift the film. Finally, using a removal device to remove the at least one semiconductor component from the film.

Abstract: A printed circuit board having a generally box-like carrier plate with a top side and an underside. The board has at least first and second conductor track plane separated by a first distance and an electrical circuit which occupies at least one section of the carrier plate. The section contains a screen for protecting the circuit from electromagnetic interference. The screen has a first screening conductor track which is arranged on the first conductor track plane and surrounds the section, and a second screening conductor track which is arranged on the second conductor track plane and also surrounds the section. The first and second screening conductor tracks are congruent at least in a circumferential region which surrounds the circuit. The screen has, in the circumferential region, a plurality of plated-through holes which penetrate the carrier plate and connect the first and second screening conductor tracks.