Abstract: A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrode is electrically connected to the base zone and surrounded by the emitter zone. A first penetration region, including at least first and second groups of apertures in the emitter zone arranged in corresponding concentric circles of different diameters about the control electrode, permits electrical contact between the base and emitter zones. The number of apertures in each of the first and second groups is the same, and the region of the emitter zone in which the first penetration region is located is of smaller expanse than the remainder of the emitter zone.

Abstract: A semiconductor rectifier unit composed of at least two rectifier elements, late-shaped contact elements contacting each rectifier element, components producing spring pressure for clamping the rectifier elements between the contact elements, and a carrier body supporting the rectifier elements, contact elements and clamping components. Each rectifier element is composed of a semiconductor body having contact electrodes on opposite surfaces thereof and two contact members contacting the electrodes and forming a separable stack with the semiconductor body. A body of insulating material surrounds each rectifier element and is interposed between the contact elements to define therewith an enclosure for each rectifier element, and sealing rings form a sealed joint between the body of insulating material and each contact element for sealing the enclosure for each rectifier element.

Abstract: A semiconductor element is provided as an electrically tested, economical, ong time storable and simple individual element for easy assembly and universal application. A semiconductor disk and an insulating body annularly surrounding the semiconductor disk are used. The insulating body is furnished with a recess substantially adapted to the edge zone of the semiconductor disk and which is also formed in the regions adjacent to the recess for a concentric disposition of contacting components on the two sides of the semiconductor disk. The semiconductor disk is supported and embedded at its edge zone in the recess of the insulating body. In case of a semiconductor disk with a gate electrode the gate current conductor is led through the insulating body and is then formed as a spring body with a rotatable and curved end piece for pressure contacting the gate electrode.

Abstract: A method for producing semiconductor bodies having a glass covered defined dge profile from a semiconductor wafer comprising the steps of applying etch resistant protective coating to a surface oxide layer on the semiconductor wafer, cutting groove-shaped recesses in the wafer in a predetermined pattern, etching the wafer through the recesses to produce a deep portion passing through at least one pn-junction, removing the surface oxide layer and etch resistant coating, applying an insulating and stabilizing glass coating to the side faces of the deep portion of the wafer, applying a contact metal coating, dividing the wafer into semiconductor bodies along the center planes of selected deep portions of the wafer and covering the surface of the semiconductor bodies with an insulating lacquer at those portions which have been exposed by the dividing step.

Abstract: In order to efficiently dissipate heat from both sides of a semiconductor vice to an associated cooling element, the device is contacted at its two load current conducting sides by conductive contacting elements and the contacting elements are both firmly connected to the cooling element in a thermally conductive and electrically insulating manner.

Abstract: In a surfacing process for the stabilization of semiconductor wafers in which a glass coating is provided on the surface of the semiconductor at least in the region where a pn-junction thereof extends to the surface, the glass coating is provided by directly forming on the surface of the semiconductor a layer of the oxide of the semiconductor material, applying to the semiconductor oxide layer, by melting, a base layer composed of a common glass having a thermal coefficient of expansion matched to that of the semiconductor material, and applying to the base layer a terminating layer of a glass which has a thermal coefficient of expansion lower than that of the semiconductor material, by melting such glass at a temperature in a higher temperature range adjacent that required for melting the glass of the base layer.

Abstract: A method of producing semiconductor devices having high reverse blocking ability comprising initially forming grooves in at least one major surface of a semiconductor disc of a first conductivity type according to a pattern which subdivides the disc into areal sections capable of being separated into individual device-containing semiconductor wafers and then subjecting the disc to a diffusion process to provide in each section a sequence of layer type zones of different conductivities which form at least one pn-junction and with one of the layer zones being a highly resistive zone, and to provide a zone of single conductivity type passing through the entire disc in the profile region of each of the grooves. A recess is then formed in each section of the major surface which is adjacent the pn-junction which is to be stressed in the reverse direction during use of the intended device and adjacent to each of the grooves.

Abstract: An improved semiconductor rectifier unit of the type in which two semicontor rectifier devices are electrically insulated and thermally conductively arranged in an electrical series connection so that a current conducting lead associated with the input and a current conducting lead associated with the output of the series connection as well as a third current conducting lead associated with the connecting conductor between the semiconductor devices are arranged in a row and each one of the two outer current conducting leads together with its associated semiconductor device are firmly mounted on a respective common contact plate which is fastened on the base plate via a wafer of electrically insulating thermally conductive material and in which the semiconductor devices have their contacting and connecting members accommodated in a housing including the base plate and a hollow plastic member fastened to the base plate.

Abstract: An improved semiconductor device with a high blocking capability of the t having a semiconductor wafer with at least two layer type zones of alternatingly opposite conductivity type and different doping concentrations which form a pn junction therebetween which intersects the edge surface of the semiconductor wafer, the higher doped of the at least two zones forming the pn junction being an outer zone of said semiconductor wafer and extending along one of the major surfaces thereof, the edge surface of the semiconductor wafer enclosing, in its path from the higher doped zone to the adjacent lower doped zone, an angle of less than 90.degree. with the surface of the pn junction, and a contact on each of the opposed parallel major surfaces of the wafer.

Abstract: An improved semiconductor rectifier arrangement of the type in which two ncapsulated rectifier elements, each having at least one pn-junction, are each fastened, via respective metal contact discs and in a manner that insulates the rectifier elements electrically and provides good heat conductance, on a common cooling member provided with coolant passages in which each rectifier element is connected at its upper connecting terminal to another rectifier element via a current conductor fastened on the contact disc associated with the other rectifier element to form an antiparallel circuit, and in which the structure comprising the cooling member, the rectifier elements and the current conductors is embedded in an insulating mass. Each contact disc bearing a rectifier element is provided with a connecting member for connecting the rectifier arrangement with current conductors, and is fastened to a suitably metallized surface section of a wafer made of a thermally good conducting electrical insulating material.

Abstract: A semiconductor rectifier arrangement in which two semiconductor rectifier evices which each have at least one pn junction are fastened with their connecting components to one side of a common metallic base plate in an electrically isolated but thermally conducting manner, are connected into an electrical series circuit to form a structural unit and are disposed in a housing. In addition to the two current conducting terminals associated with the input and output of the series circuit, a third current conducting terminal is provided which is connected with the conductor connecting the two semiconductor rectifier wafers in series. The three current conducting terminals are arranged in a row with the third terminal associated with the connecting conductor preferably being disposed at one end of the row.

Abstract: A semiconductor device which is resistant against alternating thermal stres in which a disc of semiconductor material, which is provided with at least one pn-junction and with solderable contacting coatings on its opposite major surfaces, has these coatings permanently connected, in a direct planar manner, with current conducting connections by means of a soft solder. The soft solders employed are tin solders containing 3 to 8% antimony, 0.1 to 2% nickel, remainder tin, or 3 to 8% antimony, 0.1 to 3% copper, 0.1 to 2% cadmium, remainder tin, or 1 to 6% silver, 0.1 to 2% cadmium, remainder tin; cadmium solders containing 10 to 25% zinc, 1 to 5% silver, remainder cadmium, or 10 to 25% zinc, 5% silver, 3% copper, remainder cadmium; zinc solders containing 10 to 25% cadmium, 0.1 to 3% copper, remainder zinc; and lead solders containing 10 to 20% cadmium, 0.3 to 5% antimony, remainder lead, or 1 to 5% silver, 0.5 to 2% tin, 0.1 to 2% nickel, 0.1 to 3% copper, remainder lead.

Abstract: An improved method for producing a layer of a protective lacquer, which ioves the blocking properties and stabilizes the surface of a semiconductor device, on the edge surface of a semiconductor body in the region where the pn-junction or junctions of the device formed in the body exit to the surface, wherein the semiconductor wafers are applied, at mutual spacings appropriate for their further processing, to a plastic support layer which is heated until it softens, after cooling of the support a protective lacquer is introduced in the spaces between the semiconductor wafers to enclose the pn-junction(s) coming to the surface, and after hardening of the protective lacquer the lacquer foil formed thereby together with the semiconductor wafers embedded therein is removed from the support.

Abstract: A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.

Abstract: An electrically insulating composition adapted for the encapsulation of a miconductor body and for protecting the semiconductor surface against harmful impurities, comprising a mixture of a polymerizable organic resin, at least one filler which improves the electrical properties of the semiconductor body, and at least one organic chelating agent capable of binding undesirable impurities in said resin and in said filler.