Abstract: Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.
Type:
Grant
Filed:
June 26, 2014
Date of Patent:
June 20, 2017
Assignee:
Semilab SDI LLC
Inventors:
Jacek Lagowski, Marshall D. Wilson, Ferenc Korsos, György Nádudvari