Patents Assigned to SEMILED OPTOELECTRONICS CO., LTD.
  • Publication number: 20190165231
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: May 30, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20190067529
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 28, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd,
    Inventors: Trung Tri Doan, David Trung Doan
  • Patent number: 9653435
    Abstract: A light emitting diode (LED) package includes a main vertical LED (VLED) die; a short circuit VLED die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main VLED die and a second electrode in electrical communication with a second semiconductor layer of the main VLED die.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: May 16, 2017
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Publication number: 20170018537
    Abstract: A light emitting diode (LED) package includes a main VLED die; a short circuit VLED die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main VLED die and a second electrode in electrical communication with a second semiconductor layer of the main VLED die.
    Type: Application
    Filed: July 14, 2015
    Publication date: January 19, 2017
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Patent number: 9537073
    Abstract: A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: January 3, 2017
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Patent number: 9437794
    Abstract: A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 6, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Patent number: 9419195
    Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the first-type semiconductor layer.
    Type: Grant
    Filed: July 27, 2014
    Date of Patent: August 16, 2016
    Assignee: SemiLEDS Optoelectronics Co., LTD.
    Inventor: Yi-Feng Fu Shih
  • Publication number: 20160225968
    Abstract: A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.
    Type: Application
    Filed: April 14, 2016
    Publication date: August 4, 2016
    Applicant: SemiLEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Publication number: 20160181494
    Abstract: A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.
    Type: Application
    Filed: February 8, 2016
    Publication date: June 23, 2016
    Applicant: SemiLEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Patent number: 9343620
    Abstract: A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: May 17, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: 9343639
    Abstract: A light emitting diode (LED) device includes a substrate, a light emitting diode (LED) die mounted to the substrate configured to emit electromagnetic radiation, a lens covering the (LED) die, and a lens protective structure configured to protect the lens and a lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens. The lens protective structure can also be configured to reflect electromagnetic radiation increasing light extraction from the (LED) device. A method for fabricating the (LED) device includes the step of forming an opaque lens protective structure on the lens or on the lens bonding layer configured to protect the lens and the lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens.
    Type: Grant
    Filed: November 29, 2013
    Date of Patent: May 17, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: David T Doan
  • Patent number: 9312455
    Abstract: A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The method also includes the step of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: April 12, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jui-Kang Yen, De-Shuo Chen
  • Publication number: 20160027978
    Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer via, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the second type semiconductor layer.
    Type: Application
    Filed: July 27, 2014
    Publication date: January 28, 2016
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Patent number: 9231152
    Abstract: The present invention provides a light emitting diode, which comprises a first LED die, a second LED die, and a dummy LED die, wherein the second LED die is disposed between the first LED die and the dummy LED die, and each die comprises a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers. The first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die, and the first semi-conductive layer of the second LED die is coupled to the first and second semi-conductive layers of the dummy LED die.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: January 5, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Trung-Tri Doan, Chao-Chen Cheng, Yi-Feng Shih
  • Patent number: 9214456
    Abstract: A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED).
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: December 15, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Trung Tri Doan
  • Patent number: 9190589
    Abstract: The present invention provides a light emitting diode, which comprises a first LED die and a second LED die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: November 17, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Trung-Tri Doan, Chao-Chen Cheng, Yi-Feng Shih
  • Publication number: 20150280078
    Abstract: A white flip chip light emitting diode (FC LED) includes a flip chip (LED) die configured to emit electromagnetic radiation; reflective sidewalls on the (LED) die; and a wavelength conversion member having a uniform thickness and a surface area greater than or equal to a footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. A method for fabricating the white flip chip light emitting diode (FC LED) includes the steps of: providing the flip chip (LED) die; forming reflective sidewalls on the flip chip (LED) die; and forming a wavelength conversion member on the flip chip (LED) die.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 1, 2015
    Applicant: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: JUI-KANG YEN, YUNG-WEI CHEN, CHIH-HSUN CHEN
  • Patent number: 9130114
    Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: September 8, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Hao-Chung Cheng, Feng-Hsu Fan, Wen-Huang Liu, Chao-Chen Cheng, David Trung Doan, Yang Po Wen
  • Publication number: 20150072455
    Abstract: A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The method also includes the step of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
    Type: Application
    Filed: November 14, 2014
    Publication date: March 12, 2015
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventors: JUI-KANG YEN, De-Shuo Chen
  • Patent number: 8933467
    Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: January 13, 2015
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Tien Wei Tan, Wen-Huang Liu, Chen-Fu Chu, Yung Wei Chen