Patents Assigned to Semileds Corporation
  • Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
    Patent number: 8680534
    Abstract: A vertical light-emitting diode (VLED) includes a metal substrate, a p-electrode coupled to the metal substrate, a p-contact coupled to the p-electrode, a p-GaN portion coupled to the p-electrode, an active region coupled to the p-GaN portion, an n-GaN portion coupled to the active region, and a phosphor layer coupled to the n-GaN portion.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: March 25, 2014
    Assignee: Semileds Corporation
    Inventors: Chuong A Tran, Trung Tri Doan
  • Light-emitting diode with increased light extraction
    Patent number: 8008678
    Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: August 30, 2011
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan
  • Method of making light emitting diodes (LEDs) with improved light extraction by roughening
    Patent number: 7524686
    Abstract: Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: April 28, 2009
    Assignee: Semileds Corporation
    Inventors: Chen-Fu Chu, Hao-Chun Cheng, Feng-Hsu Fan, Wen-Huang Liu, Chao-Chen Cheng
  • Light emitting diodes (LEDs) with improved light extraction by roughening
    Patent number: 7473936
    Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: January 6, 2009
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan
  • Light emitting diode with conducting metal substrate
    Patent number: 7432119
    Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: October 7, 2008
    Assignee: Semileds Corporation
    Inventor: Trung Tri Doan
  • Method of making a light emitting diode
    Patent number: 7413918
    Abstract: Methods are disclosed for forming a vertical semiconductor light emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: August 19, 2008
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan
  • Systems and methods for producing light emitting diode array
    Patent number: 7378288
    Abstract: Systems and methods are disclosed for producing vertical LED array on a metal substrate; evaluating said array of LEDs for defects; destroying one or more defective LEDs; forming good LEDs only LED array suitable for wafer level package.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: May 27, 2008
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan
  • Systems and methods for producing white-light emitting diodes
    Patent number: 7195944
    Abstract: A vertical light emitting diode (LED) includes a metal substrate; a p-electrode coupled to the metal substrate; a p-contact coupled to the p-electrode; a p-GaN portion coupled to the p electrode; an active region coupled to the p-GaN portion; an n-GaN portion coupled to the active region; and a phosphor layer coupled to the n-GaN.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: March 27, 2007
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan
  • Light emitting diodes (LEDs) with improved light extraction by roughening
    Patent number: 7186580
    Abstract: Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: March 6, 2007
    Assignee: Semileds Corporation
    Inventors: Chuong Anh Tran, Trung Tri Doan