Patents Assigned to SemiLEDs Optoelectronics Co., Ltd.
  • Patent number: 12364079
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and mounting additional devices on the desired circuitry to form a second circuitry level; performing the mounting step multiple times to form a plurality of electronic products that include the additional devices and the second circuitry level; and separating the LEDs from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: June 14, 2022
    Date of Patent: July 15, 2025
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20250143048
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: December 28, 2024
    Publication date: May 1, 2025
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: DAVID TRUNG DOAN, TRUNG TRI DOAN
  • Patent number: 12206051
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: January 21, 2025
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Patent number: 12191434
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: October 9, 2023
    Date of Patent: January 7, 2025
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20240038958
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: SemILEDs Optoelectronics Co., Ltd.
    Inventors: DAVID TRUNG DOAN, TRUNG TRI DOAN
  • Publication number: 20230411565
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: August 9, 2023
    Publication date: December 21, 2023
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Patent number: 11817536
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: November 14, 2023
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 11728461
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: August 15, 2023
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Publication number: 20220352449
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and mounting additional devices on the desired circuitry to form a second circuitry level; performing the mounting step multiple times to form a plurality of electronic products that include the additional devices and the second circuitry level; and separating the LEDs from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: June 14, 2022
    Publication date: November 3, 2022
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David TRUNG DOAN, Trung TRI DOAN
  • Publication number: 20220278261
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: February 21, 2022
    Publication date: September 1, 2022
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 11387397
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: July 12, 2022
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20210119088
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, DAVID TRUNG DOAN
  • Patent number: 10964851
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: March 30, 2021
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Publication number: 20210043820
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: October 23, 2020
    Publication date: February 11, 2021
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 10910535
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: February 2, 2021
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20190165231
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: May 30, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20190067529
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 28, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd,
    Inventors: Trung Tri Doan, David Trung Doan
  • Publication number: 20140191260
    Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.
    Type: Application
    Filed: March 13, 2014
    Publication date: July 10, 2014
    Applicants: SemiLEDs Optoelectronics Co., Ltd., VisEra Technologies Company Limited
    Inventor: Wu-Cheng KUO
  • Patent number: 8685764
    Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: April 1, 2014
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Patent number: D715234
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: October 14, 2014
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Hsun-Cheng Chan, Hao-Chun Cheng, Chen-Fu Chu