Patents Assigned to SemiLEDs Optoelectronics Co., Ltd.
  • Publication number: 20240038958
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: SemILEDs Optoelectronics Co., Ltd.
    Inventors: DAVID TRUNG DOAN, TRUNG TRI DOAN
  • Publication number: 20230411565
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: August 9, 2023
    Publication date: December 21, 2023
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Patent number: 11817536
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: November 14, 2023
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 11728461
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: August 15, 2023
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Publication number: 20220352449
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and mounting additional devices on the desired circuitry to form a second circuitry level; performing the mounting step multiple times to form a plurality of electronic products that include the additional devices and the second circuitry level; and separating the LEDs from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: June 14, 2022
    Publication date: November 3, 2022
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David TRUNG DOAN, Trung TRI DOAN
  • Publication number: 20220278261
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: February 21, 2022
    Publication date: September 1, 2022
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 11387397
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: July 12, 2022
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20210119088
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, DAVID TRUNG DOAN
  • Patent number: 10964851
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: March 30, 2021
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, David Trung Doan
  • Publication number: 20210043820
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: October 23, 2020
    Publication date: February 11, 2021
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Patent number: 10910535
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: February 2, 2021
    Assignee: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20190165231
    Abstract: A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: May 30, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd.
    Inventors: David Trung Doan, Trung Tri Doan
  • Publication number: 20190067529
    Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 28, 2019
    Applicant: SemiLEDs Optoelectronics Co., Ltd,
    Inventors: Trung Tri Doan, David Trung Doan
  • Patent number: 9653435
    Abstract: A light emitting diode (LED) package includes a main vertical LED (VLED) die; a short circuit VLED die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main VLED die and a second electrode in electrical communication with a second semiconductor layer of the main VLED die.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: May 16, 2017
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Publication number: 20170018537
    Abstract: A light emitting diode (LED) package includes a main VLED die; a short circuit VLED die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main VLED die and a second electrode in electrical communication with a second semiconductor layer of the main VLED die.
    Type: Application
    Filed: July 14, 2015
    Publication date: January 19, 2017
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Patent number: 9537073
    Abstract: A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: January 3, 2017
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Patent number: 9437794
    Abstract: A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 6, 2016
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Patent number: 9419195
    Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the first-type semiconductor layer.
    Type: Grant
    Filed: July 27, 2014
    Date of Patent: August 16, 2016
    Assignee: SemiLEDS Optoelectronics Co., LTD.
    Inventor: Yi-Feng Fu Shih
  • Publication number: 20160225968
    Abstract: A method for fabricating a light emitting diode (LED) die includes the steps of forming an epitaxial stack on a substrate having an n-type semiconductor layer, multiple quantum well (MQW) layers, and a p-type semiconductor layer. The method also includes the steps of forming a plurality of trenches in the n-type semiconductor layer, and forming a strap layer having conductive straps and contact areas in the trenches, forming an electrical insulator layer on the strap layer, forming an n-pad on the n-type semiconductor layer, and forming a p-pad on the p-type semiconductor layer.
    Type: Application
    Filed: April 14, 2016
    Publication date: August 4, 2016
    Applicant: SemiLEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH
  • Publication number: 20160181494
    Abstract: A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.
    Type: Application
    Filed: February 8, 2016
    Publication date: June 23, 2016
    Applicant: SemiLEDS OPTOELECTRONICS CO., LTD.
    Inventor: YI-FENG SHIH