Patents Assigned to Semi-Materials Co. Ltd
  • Publication number: 20120064659
    Abstract: A method for manufacturing a solar cell includes conducting texturing by injecting plasma on an entire surface of a solar cell wafer, forming an emitter layer by diffusing a solid source on the textured solar cell wafer, forming a passivation layer on the solar cell wafer on which the emitter layer is formed, and forming electrodes. A PSG (PhosphoSilicate Glass) layer is prevented from being formed on the solar cell wafer.
    Type: Application
    Filed: November 3, 2010
    Publication date: March 15, 2012
    Applicant: Semi-Materials Co., Ltd.
    Inventors: Kun-Joo PARK, Gi-Hong Kim
  • Publication number: 20120061022
    Abstract: A plasma texturing reaction apparatus includes a chamber including a dielectric window and a chamber body and receiving a solar cell wafer to be textured, and a polygonal induction coil provided at an outer upper portion of the dielectric window to generate a magnetic field for generating plasma, a high frequency low power supply unit that supplies a cathode of the chamber with high frequency power corresponding to process conditions, and a high frequency source power supply unit that supplies the polygonal induction coil with high frequency power.
    Type: Application
    Filed: November 3, 2010
    Publication date: March 15, 2012
    Applicant: Semi-Materials Co., Ltd.
    Inventors: Kun- Joo Park, Gi-Hong Kim
  • Publication number: 20120006491
    Abstract: A plasma texturing apparatus for a solar cell includes a susceptor having engagement projections to prevent a wafer mounted therein from slipping outward or fluctuating back and forth when aligning the wafer over a cathode for plasma texturing; a focus ring functioning to confine plasma when conducting a plasma texturing process; and a clamp placed on an inner surface of the focus ring in such a way as to have a downward slope, and having one end which is coupled to the focus ring and the other end which faces away from the one end, is formed to be pointed and functions to squeeze and support peripheral portions of the wafer.
    Type: Application
    Filed: September 7, 2010
    Publication date: January 12, 2012
    Applicant: SEMI-MATERIALS CO., LTD
    Inventors: Kun-Joo PARK, Yong-Gab KIM, Gi-Hong KIM, Kun PARK
  • Publication number: 20110290184
    Abstract: Provided is a poly silicon deposition device, which includes an electrode part, a silicon core rod part, a silicon core rod heating part, a gas supply pipe, and a gas injection part. The electrode part includes a first electrode and a second electrode which are disposed in a bottom of a reactor including a gas inlet for introducing source gas, a gas outlet for discharging gas, and a heating material inlet for introducing a heating material, and are spaced a predetermined distance from each other. The silicon core rod part receives electric current from the first electrode and transmits the electric current to the second electrode to generate heat. The silicon core rod heating part is spaced a predetermined distance from the silicon core rod part and surrounds the silicon core rod part and includes a heater receiving the heating material introduced through the heating material inlet of the reactor.
    Type: Application
    Filed: November 25, 2009
    Publication date: December 1, 2011
    Applicant: Semi-Materials Co. Ltd
    Inventors: Ho-Jeong Yu, Seong-Eun Park, Il-Soo Eom