Abstract: Provided is a poly silicon deposition device, which includes an electrode part, a silicon core rod part, a silicon core rod heating part, a gas supply pipe, and a gas injection part. The electrode part includes a first electrode and a second electrode which are disposed in a bottom of a reactor including a gas inlet for introducing source gas, a gas outlet for discharging gas, and a heating material inlet for introducing a heating material, and are spaced a predetermined distance from each other. The silicon core rod part receives electric current from the first electrode and transmits the electric current to the second electrode to generate heat. The silicon core rod heating part is spaced a predetermined distance from the silicon core rod part and surrounds the silicon core rod part and includes a heater receiving the heating material introduced through the heating material inlet of the reactor.