Patents Assigned to Semimetals, Inc.
  • Semiconductor assembly, method of manufacturing same, and bonding agent therefor
    Patent number: 4005457
    Abstract: A semiconductor assembly devoid of wire bonds presents economies of manufacture and is especially suited for light emitting diodes. The semiconductor assembly comprises a semiconductor, an electrode-containing substrate supporting the semiconductor, and an electrode-containing cover supported by the semiconductor. Novel cure-shrinkable adhesive means incorporating an oxide remover (preferably a halogen) physically bonds together the semiconductor and the cover electrode.
    Type: Grant
    Filed: July 10, 1975
    Date of Patent: January 25, 1977
    Assignee: Semimetals, Inc.
    Inventors: Michael Hill, Josef Intrater, Tugrul Yasar
  • Automatic diameter control for crystal growing facilities
    Patent number: 3998598
    Abstract: In the Czochralsky method of crystal growing, a crystal or ingot is pulled from a melt. The control of the present invention will find particular application in the Czochralsky pulling of large crystals such as those of silicon which typically are 40 inches long and 3 inches in diameter. The control assures a uniform diameter over the entire length of the crystal as well as avoids the formation of "flats" on the surface of the crystal. This is achieved by optically sighting the crystal melt interface and adjusting the sighting for variations in melt level.
    Type: Grant
    Filed: February 7, 1974
    Date of Patent: December 21, 1976
    Assignee: Semimetals, Inc.
    Inventor: Anthony C. Bonora
  • Removal-compensating polishing apparatus
    Patent number: 3977130
    Abstract: A polishing apparatus is provided having a flat, stiffly elastic mounting plate for the workpieces. The workpieces are placed in contact with a rotating polishing plate but are kept from rotating along with it by a holder secured to the mounting plate. The flat face of the holder is spaced from the mounting plate. An annular ring is fixed in position between, and in contact with, the face of the holder and the mounting plate. As the workpieces are pressed against the polishing plate by a force transmitted through the holder, the ring, and the mounting plate, the mounting plate assumes a given curvature depending in part on the radius of the ring.
    Type: Grant
    Filed: May 12, 1975
    Date of Patent: August 31, 1976
    Assignee: Semimetals, Inc.
    Inventor: Raymond L. Degner
  • Process for production of III-V compound epitaxial crystals
    Patent number: 3975218
    Abstract: A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.
    Type: Grant
    Filed: December 13, 1973
    Date of Patent: August 17, 1976
    Assignee: Semimetals, Inc.
    Inventor: Robert A. Ruehrwein