Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A temperature sensor includes a NAND gate and a plurality of delay units. The NAND gate includes a first and a second input terminals, and an output terminal. The first input terminal is configured to receive an external starting control signal. The plurality of delay units are connected in series. An input end of the first delay unit is connected to the output terminal of the NAND gate. An output end of the last delay unit is connected to the second input terminal of the NAND gate, thereby forming a ring oscillator structure. The temperature sensor can realize conversion of temperature-leakage-frequency based on the ring oscillator structure in a temperature range of ?40˜125° C., thereby simplifying design complexity and achieves high accuracy.

Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A reconfigurable all-digital temperature sensor includes a NAND gate and several delay units, the NAND gate comprises two input terminals and an output terminal, one input terminal is used for external starting control signal; a plurality delay units are connected in series, the input end of the first delay unit is connected to the output terminal of the NAND gate, and the output end of the last delay unit is connected to another input terminal of the NAND gate, thereby forming a ring oscillator structure; each delay unit includes a leakage-based inverter and a Schmitt trigger, and the output end of the leakage-based inverter is connected to the input end of the Schmitt trigger. The reconfigurable all-digital temperature sensor can realize the conversion of temperature-leakage-frequency based on the ring oscillator structure in the temperature range of ?40˜125° C., thereby reducing the design complexity and achieving high accuracy.

Abstract: A test apparatus for testing electrical parameters of a target chip includes: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: An address register includes a plurality of edge-triggered flip-flop registers having an input D, an input R, an input CK, and an output Q; a counter logic; a shifter logic; a multiplexer; input ports including a reset signal RST, a clock signal CLK, a shift enable signal SE, a shift data input signal SI; an output port including address signals ADDR. D is coupled to a data output of the multiplexer; R is coupled to a reset (RST) pad; CK is coupled to a clock (CLK) pad; Q is coupled to an address (ADDR) pad; an input of the counter logic is coupled to ADDR; an input of the shifter logic is coupled to ADDR and the shift data input signal SI; an input of the multiplexer is coupled to SE, an output of the counter logic, and an output of the shifter logic.

Abstract: A test apparatus for testing electrical parameters of a target chip, the apparatus including: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: A reconfigurable all-digital temperature sensor includes a NAND gate and several delay units, the NAND gate comprises two input terminals and an output terminal, one input terminal is used for external starting control signal; a plurality delay units are connected in series, the input end of the first delay unit is connected to the output terminal of the NAND gate, and the output end of the last delay unit is connected to another input terminal of the NAND gate, thereby forming a ring oscillator structure; each delay unit includes a leakage-based inverter and a Schmitt trigger, and the output end of the leakage-based inverter is connected to the input end of the Schmitt trigger. The reconfigurable all-digital temperature sensor can realize the conversion of temperature-leakage-frequency based on the ring oscillator structure in the temperature range of ?40˜125° C., thereby reducing the design complexity and achieving high accuracy.

Abstract: A temperature sensor includes a NAND gate and a plurality of delay units. The NAND gate includes a first and a second input terminals, and an output terminal. The first input terminal is configured to receive an external starting control signal. The plurality of delay units are connected in series. An input end of the first delay unit is connected to the output terminal of the NAND gate. An output end of the last delay unit is connected to the second input terminal of the NAND gate, thereby forming a ring oscillator structure. The temperature sensor can realize conversion of temperature-leakage-frequency based on the ring oscillator structure in a temperature range of ?40˜125° C., thereby simplifying design complexity and achieves high accuracy.

Abstract: An address register includes a plurality of edge-triggered flip-flop registers having an input D, an input R, an input CK, and an output Q; a counter logic; a shifter logic; a multiplexer; input ports including a reset signal RST, a clock signal CLK, a shift enable signal SE, a shift data input signal SI; an output port including address signals ADDR. D is coupled to a data output of the multiplexer; R is coupled to a reset (RST) pad; CK is coupled to a clock (CLK) pad; Q is coupled to an address (ADDR) pad; an input of the counter logic is coupled to ADDR; an input of the shifter logic is coupled to ADDR and the shift data input signal SI; an input of the multiplexer is coupled to SE, an output of the counter logic, and an output of the shifter logic.

Abstract: A test apparatus for testing electrical parameters of a target chip, the apparatus including: a function generator; a switch matrix module; a plurality of source measurement units (SMUs); at least one of the SMUs is configured to provide power supply for the target chip; at least one of the SMUs is coupled to the switch matrix module; and at least two of said SMUs are test SMUs coupled to ports of the target chip and the function generator.

Abstract: To improve test efficiency of addressable test chips, an addressable test chip test system includes a test equipment, a probe card and an addressable test chip, the test equipment connects to the addressable test chip through the probe card to constitute a test path, the test system includes a new type of address register, which can provide two test modes for users according to user's needs. A new type of high density addressable test chip can accommodate DUTs of more than 1000/mm2.

Abstract: An addressable ring oscillator test chip includes: a plurality of ring oscillator test units, and a peripheral structure including peripheral circuits and PADs. The peripheral circuits share a first power source and a first grounding. Each test unit is associated with an independent power source to thereby decrease voltage drop resulting from wiring and to reduce the influence from other test units. A method of generating a variety of ring oscillators includes: generating a cell template corresponding to a basic unit, including defining a parameterized cell template; generating a ring oscillator based on the cell template, including generating ring oscillators of different stages by selecting different parameters of the cell template; realizing internal connections of the ring oscillator; and generating an instantiated ring oscillator by replacing cell templates with corresponding basic units.

Abstract: To improve test efficiency of addressable test chips, an addressable test chip test system includes a test equipment, a probe card and an addressable test chip, the test equipment connects to the addressable test chip through the probe card to constitute a test path, the test system includes a new type of address register, which can provide two test modes for users according to user's needs. A new type of high density addressable test chip can accommodate DUTs of more than 1000/mm2.

Abstract: An addressable test circuit is configured to test parameters of a plurality of transistors. The addressable test circuit includes combination logic circuits including a plurality of gate circuits and are configured to select a device under test, a plurality of PADs, a plurality of address bus and data bus; wherein six or more of the data buses are test signal lines. A test method can employ the above address test circuit for testing parameters of a plurality of transistors, where the subthreshold leakage current Ioff and saturation current Idsat are measured in different signal lines respectively to ensure the accurate measurement of the two parameters in one circuit.

Abstract: A programmable test chip includes a target chip to be tested and addressing circuits fabricated on the same wafer. The addressing circuits can be placed in the scribe lines or a pre-allocated area of the wafer. When testing the target chip, a circuit connecting the target chip and the addressing circuits can be fabricated on demand. In some cases the target chip is not connected to the addressing circuits, and a DUT array exists in a scribe line having a connecting circuit prefabricated between the addressing circuits with the DUT array for testing the DUT array in the scribe line. When the need for testing the target chip arises, the prefabricated connecting circuit can be cut, and the connecting circuit connecting the target chip and the addressing circuits can be fabricated. Based on results from such test chips, the manufacturing process can be better studied.

Abstract: An addressable test circuit is configured to test parameters of a plurality of transistors. The addressable test circuit includes combination logic circuits including a plurality of gate circuits and are configured to select a device under test, a plurality of PADs, a plurality of address bus and data bus; wherein six or more of the data buses are test signal lines. A test method can employ the above address test circuit for testing parameters of a plurality of transistors, where the subthreshold leakage current Ioff and saturation current Idsat are measured in different signal lines respectively to ensure the accurate measurement of the two parameters in one circuit.