Abstract: A sensor network collects time-series data from a process tool and supplies the data to an analysis system where pattern analysis techniques are used to identify structures and to monitor subsequent data based on analysis instructions or a composite model. Time-series data from multiple process runs are used to form a composite model of a data structure including variation. Comparison with the composite model gives an indication of tool health. A sensor network may have distributed memory for easy configuration.

Abstract: A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device.

Abstract: A sensor network collects time-series data from a process tool and supplies the data to an analysis system where pattern analysis techniques are used to identify structures and to monitor subsequent data based on analysis instructions or a composite model. Time-series data from multiple process runs are used to form a composite model of a data structure including variation. Comparison with the composite model gives an indication of tool health. A sensor network may have distributed memory for network configuration.

Abstract: A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device.

Abstract: At least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structure have properties (such as one or more of the following: dimensions and coefficient of friction) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.

Abstract: At least one pair of capacitively coupled electrodes contained in a structure is used to sense the deflection of a diaphragm in a pressure or force sensor for measuring the pressure or force exerted on the diaphragm. Preferably the structure has properties (such as one or more of the following: dimensions, hardness, area and flexibility) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.

Abstract: A process condition measuring device has electronic components sandwiched between two conductive substrate portions. The conductive substrate portions are joined by an electrically conductive pathway. Native oxide is removed from substrate portions and electrically conductive contact pads are formed that are then joined together with electrically conductive adhesive to form the electrically conductive pathway.

Abstract: A process condition measuring device has electronic components sandwiched between two conductive substrate portions. The conductive substrate portions are joined by an electrically conductive pathway. Native oxide is removed from substrate portions and electrically conductive contact pads are formed that are then joined together with electrically conductive adhesive to form the electrically conductive pathway. Sensors may be located on the exterior of the process condition measuring device with conductive leads extending to shielded electronic components.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. A process condition measuring device surveys conditions in a target environment and records them in a memory for later transmission or downloading.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device. Isolation may be provided by vacuum or suitable material and phase change material may be located adjacent to electronics to maintain a low temperature.

Abstract: Multiple sensors may be attached to a substrate to measure conditions at different points. Positioning the sensors accurately may be achieved using a template to establish sensor position. A pre-fabricated kit including a template, sensors and a cable assembly may be easily transported so that sensors may be attached in the field.

Abstract: A measuring device incorporating a substrate with sensors that measure the processing conditions that a wafer may undergo during manufacturing. The substrate can be inserted into a processing chamber by a robot head and the measuring device can transmit the conditions in real time or store the conditions for subsequent analysis. Sensitive electronic components of the device can be distanced or isolated from the most deleterious processing conditions in order increase the accuracy, operating range, and reliability of the device.

Abstract: A sensor of a parameter such as temperature includes an indicator encapsulated within a rigid enclosure, wherein the sensor has a characteristic that varies with the parameter that is detectable upon illumination with electromagnetic radiation through a window of the enclosure that is transparent to the radiation. In a specific example, the indicator changes an optical characteristic such as its color as a function of its temperature, and may be of an irreversible type in order to indicate the peak temperature reached. The sensor may include a pattern of such indicators that have different peak temperatures to which they respond, so that the sensor gives a unique visual pattern at each temperature within its measurement range. This pattern may be viewed directly or processed by computer to compare the pattern with those which indicate known temperatures.

Abstract: Systems and methods are described for integrated (embedded) semiconductor wafer temperature measurement equipment and processes. An integrated wafer temperature measurement apparatus, comprising: a substrate; a placement resource formed in said substrate; a sensor lead located in said placement resource, said sensor lead having a first end and a second end; a sensor coupled to said first end of said sensor lead and located in said placement resource; and a sensor lead cover coupled to said substrate. The systems and methods provide advantages in that reliability is enhanced, installation and removal are facilitated, and accuracy is improved by obviating any shadowing of the substrate and reducing temperature gradients near the sensor.

Abstract: A cable and interconnect design including a substrate containing discrete sensors in a plurality of cavities or a plurality of thin film sensors deposited throughout the substrate surface. The discrete sensors are bonded within each cavity and potted with a potting compound. Each sensor has leads joined to filaments by an interconnect system. Thin film sensor leads on the substrate connect to a signal transmitting cable by the interconnect system. The filaments are coated and converge at a strain relief coupled to the substrate. The cable, having flat and round portions, includes an array of flat signal transmitting cables arranged side by side in the flat portion and stacked one on top of the other in the round portion. Each signal cable contains a plurality of the filaments bonded together. A pair of ribbons extend along the length of the array of cables. The ribbons and array of cables are bonded together with film to form the flat portion.

Abstract: An apparatus for measuring the temperature of an object within a process chamber is described. The process chamber includes a platform for receiving the object and an energy source for transferring energy to the object. The apparatus includes a shield, and a first and second energy sensor. The shield is positioned in the chamber adjacent the object to create an isothermal cavity in the space between the object and the shield. The shield is designed to receive from the energy source an amount of energy approximating that received by the object. The first energy sensor is positioned between the shield and the platform to measure the temperature of the object. The second energy sensor measures the temperature of the shield.A method for establishing an isothermal condition within the process chamber includes the steps of varying the shield temperature in inverse relationship to the difference between the shield temperature and a target temperature.