Abstract: The vertical silicon photomultiplier according to the present invention includes a trench electrode and a PN-junction layer perpendicular to the trench electrode forms and can maximize the quantum efficiency at optical wavelengths, 200˜900 nm in such a way that: it generates electric fields horizontal thereto, by applying a reverse bias voltage to between the trench electrode and the PN-junction layer, so that, although ultraviolet light does not reach the PN-junction layer but is incident on the surface, electron-hole pairs can be produced by the horizontally generated electric fields although and an avalanche breakdown can be thus generated, and it allows ultraviolet light, capable of being transmitted to a relatively deep depth, to react with the PN-junction layer.

Abstract: An optical module is disclosed. The optical module includes: (1) a mirror part for controlling its reflection angle in an analog method; (2) an aperture for controlling an amount of light incident to the mirror part, the aperture being installed facing the mirror part; (3) a detector for detecting an optical signal from a light transmitted from the mirror part; (4) a beam emitter for emitting a beam, the beam emitter being adjacently installed to the optical signal detector; and (5) a controller for controlling the mirror part so as to locate an object, detected by the optical signal detector, at the center portion of the optical signal detector, and for controlling the beam emitter and the mirror part so as to emit a beam from the beam emitter to the object detected by the optical signal detector. The optical module can observe an object both in a wide field of view (FOV) and in detail, effectively track a rapidly moving object, and emit a beam to the object.

Abstract: The vertical silicon photomultiplier according to the present invention includes a trench electrode and a PN-junction layer perpendicular to the trench electrode forms and can maximize the quantum efficiency at optical wavelengths, 200˜900 nm in such a way that: it generates electric fields horizontal thereto, by applying a reverse bias voltage to between the trench electrode and the PN junction layer, so that, although ultraviolet light does not reach the PN-junction layer but is incident on the surface, electron-hole pairs can be produced by the horizontally generated electric fields although and an avalanche breakdown can be thus generated, and it allows ultraviolet light, capable of being transmitted to a relatively deep depth, to react with the PN-junction layer.

Abstract: An optical module is disclosed. The optical module includes: (1) a mirror part for controlling its reflection angle in an analog method; (2) an aperture for controlling an amount of light incident to the mirror part, the aperture being installed facing the mirror part; (3) a detector for detecting an optical signal from a light transmitted from the mirror part; (4) a beam emitter for emitting a beam, the beam emitter being adjacently installed to the optical signal detector; and (5) a controller for controlling the mirror part so as to locate an object, detected by the optical signal detector, at the center portion of the optical signal detector, and for controlling the beam emitter and the mirror part so as to emit a beam from the beam emitter to the object detected by the optical signal detector. The optical module can observe an object both in a wide field of view (FOV) and in detail, effectively track a rapidly moving object, and emit a beam to the object.