Patents Assigned to SensL Technologies Ltd.
  • Patent number: 11239382
    Abstract: A semiconductor photomultiplier includes a microcell, a photosensitive diode, and an anti-reflective coating. The microcell has an insulating layer formed over an active region. The photosensitive diode is formed in the active region beneath the insulating layer. The anti-reflective coating is provided on the insulating layer.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: February 1, 2022
    Assignee: SensL Technologies LTD.
    Inventors: Kevin O'Neill, Liam Wall, John Carlton Jackson
  • Patent number: 11056525
    Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: July 6, 2021
    Assignee: SensL Technologies LTD
    Inventors: Brian McGarvey, Stephen John Bellis, John Carlton Jackson
  • Patent number: 10422862
    Abstract: A LiDAR apparatus comprising a laser source for emitting laser pulses. An SiPM detector is provided for detecting reflected photons. Optics and an aperture stop is provide. The aperture stop is provided intermediate the SiPM detector and the optics for limiting an angle of view of the SiPM detector.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: September 24, 2019
    Assignee: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Patent number: 10290760
    Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: May 14, 2019
    Assignee: SensL Technologies Ltd.
    Inventors: Kevin Michael O'Neill, John Carlton Jackson, Liam Wall
  • Patent number: 10276610
    Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: April 30, 2019
    Assignee: SensL Technologies Ltd.
    Inventors: Brian McGarvey, Stephen John Bellis, John Carlton Jackson
  • Publication number: 20190067495
    Abstract: The present disclosure relates to a semiconductor photomultiplier comprising an array of interconnected microcells; wherein the array comprises at least a first type of microcell having a first junction region of a first geometric shape; and a second type of microcell having a second junction region of a second geometric shape.
    Type: Application
    Filed: August 29, 2017
    Publication date: February 28, 2019
    Applicant: SensL Technologies Ltd.
    Inventors: Paul Malachy Daly, John Carlton Jackson
  • Patent number: 10205033
    Abstract: The present disclosure relates to a semiconductor photomultiplier which comprises one or more microcells on a substrate having at least one terminal. At least one ESD protection element is operably coupled to the at least one terminal.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: February 12, 2019
    Assignee: SensL Technologies Ltd.
    Inventors: Paul Malachy Daly, John Carlton Jackson, Brian McGarvey, Stephen Bellis
  • Publication number: 20180309012
    Abstract: In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween.
    Type: Application
    Filed: June 25, 2018
    Publication date: October 25, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Kevin Michael O'Neill, John Carlton Jackson, Liam Wall
  • Publication number: 20180259391
    Abstract: A coincidence resolving time readout circuit is described. An analog SiPM sensor for detecting photons and generating an SIPM output signal is provided. An ADC is configured to provide multiple threshold values for converting the analogue SiPM output signal to digital values. A time to digital converter configured to receive multiple digital values from the ADC and timestamp the digital values.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 13, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson, Edoardo Charbon
  • Publication number: 20180259625
    Abstract: A LiDAR readout circuit is described. The readout circuit comprises an SiPM sensor for detecting photons and generating an SIPM analog output signal. A plurality of comparators are provided each having an associated threshold value and being configured to compare the SiPM analog output signal with their associated threshold value and generate a comparison signal. A time to digital converter is configured to receive the comparison signals from the plurality of comparators.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 13, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Publication number: 20180261975
    Abstract: A laser driver is described which comprises a resonant circuit having an inductor and a DC blocking capacitor. A biasing voltage reference is operably coupled to the inductor. A controller is operable for controlling the resonant circuit for selectively connecting the inductor between high and low impedance. The DC blocking capacitor is operable for connecting to a laser diode.
    Type: Application
    Filed: March 7, 2017
    Publication date: September 13, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Nikolay Pavlov, Stephen Bellis, John Carlton Jackson
  • Publication number: 20180164414
    Abstract: A LiDAR apparatus comprising a laser source for emitting laser pulses. An SiPM detector is provided for detecting reflected photons. Optics and an aperture stop is provide. The aperture stop is provided intermediate the SiPM detector and the optics for limiting an angle of view of the SiPM detector.
    Type: Application
    Filed: December 19, 2016
    Publication date: June 14, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Publication number: 20180164412
    Abstract: A LiDAR apparatus is described. The apparatus comprises an eye safe laser source for emitting laser pulses. An SiPM detector is provided for detected reflected photons; and optics are also provided. The eye-safe laser source is configured such that the emitted laser pulses have a width which are selectively matched to a desired range accuracy.
    Type: Application
    Filed: December 19, 2016
    Publication date: June 14, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Publication number: 20180164413
    Abstract: A LiDAR apparatus comprising a laser source for emitting laser pulses. An SiPM detector is provided for detecting reflected photons. Optics and an aperture stop is provide. The aperture stop is provided intermediate the SiPM detector and the optics for limiting an angle of view of the SiPM detector.
    Type: Application
    Filed: December 13, 2016
    Publication date: June 14, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Publication number: 20180164410
    Abstract: A LiDAR apparatus is described. The apparatus comprises an eye safe laser source for emitting laser pulses. An SiPM detector is provided for detected reflected photons; and optics are also provided. The eye-safe laser source is configured such that the emitted laser pulses have a width which are selectively matched to a desired range accuracy.
    Type: Application
    Filed: December 13, 2016
    Publication date: June 14, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: Salvatore Gnecchi, John Carlton Jackson
  • Publication number: 20180106911
    Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimise the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 19, 2018
    Applicant: SensL Technologies Ltd.
    Inventors: John Carlton Jackson, Peter Ward, Donal Cronin, Mike Quinlan
  • Patent number: 9810795
    Abstract: Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimize the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: November 7, 2017
    Assignee: SensL Technologies Ltd.
    Inventors: John Carlton Jackson, Peter Ward, Donal Cronin, Mike Quinlan
  • Patent number: 9659980
    Abstract: The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: May 23, 2017
    Assignee: SenSL Technologies LTD
    Inventors: Brian McGarvey, Stephen John Bellis, John Carlton Jackson
  • Patent number: 9634156
    Abstract: A silicon photomultiplier device is provided. The device comprises a plurality of photosensitive cells each having a photo-detector, a quench resistive load and a first stage capacitive load. The device is arranged in a three electrode connection configuration comprising first and second electrodes arranged to operably provide a biasing of the device and a third electrode operably used to readout a signal from the device. A second stage capacitive load is operably coupled to two or more photosensitive cells.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: April 25, 2017
    Assignee: Sensl Technologies Ltd.
    Inventors: Nikolai Pavlov, Carl Jackson, Kevin O'Neill
  • Patent number: 9437630
    Abstract: The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor photomultipliers. A semiconductor photomultiplier is described which comprises an array of interconnected photosensitive microcells; and at least one dark count rate (DCR) suppression element associated with the array.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: September 6, 2016
    Assignee: SensL Technologies Ltd.
    Inventors: Liam Wall, Kevin O'Neill, John Carlton Jackson