Abstract: A method for producing a multi-layer device. The method initially providing a substrate which comprises a support region for supporting an electrical component, then forming an electrically conductive bond layer on a surface of the substrate. The bond is configured to surround the region for supporting the component. The next step in the method is to provide an encasing layer in contact with the bond layer, such that the component is encased between the substrate and the encasing layer. The final step involves bonding the encasing layer to the bond layer to form a sealed cavity which encloses the component. Further, a multi-layer device is provided. The device comprises a substrate, at least one electrical component which is located on the substrate, an electrically conductive bond layer and an encasing layer. The bond layer is formed on the substrate and surrounds the electrical components and the encasing layer is bonded to the bond layer to form a sealed cavity encasing the components therein.

Abstract: A capacitive-type pressure sensor comprising a glass plate having an electrode formed thereon. A diaphragm is formed from a semiconductor material and bonded to the glass substrate to define an enclosed cavity containing at least a portion of the electrode, to thereby define a capacitive element, through which, in use, an electrical signal may be passed to determine a capacitance thereof which is indicative of the pressure to be determined.

Abstract: A device having electrical and mechanical components. The device comprises multiple layers in which: a first layer or set of layers arranged is to function as one or more electrodes or conductors; and a second layer is arranged to function as one or more press contracts or wire contacts or wire bond pads. The second layer has different physical properties than the first layer, wherein the first layer or set of layers is relatively hard or tough and the second layer is relatively soft or malleable. A corresponding method is provided.

Abstract: An accelerometer comprises a housing including a mass-supporting frame and a mass supported on the frame by a pair of outer spring member aligned along a first axis. The mass may comprise an outer mass connected to the pair of outer spring members and an inner mass connected to the outer mass by a number of inner spring members, the inner spring members aligned along one or more axes, which form a plane which the axis of the outer spring members also may be aligned. Also provided is means for detecting rotation of the mass and translation of the inner mass.

Abstract: A pedestal structure and its fabrication method stress release assembly of micromechanical sensors, in particular acceleration sensor, angular rate sensors, inclination sensors or angular acceleration. At least one silicon seismic mass is used as sensing element. The at least one silicon seismic mass is joined to the silicon frame via at least one assembly pedestal, the surface of which is bonded to a covering wafer, either glass or silicon.

Abstract: A sensor formed from a semiconductor material. The device comprises a support frame, a sensing element; and means for vibrating the sensing element at a frequency corresponding generally to a first resonant frequency vibration mode. Error detection means detects the resonant frequency vibration mode, the output of the error detection means being indicative of existence or otherwise an expected response of the resonant frequency vibration mode to the excitation. Means for detecting the deformation of the sensing element provides an output indicative of the parameter to be sensed, the deformation detecting means and error detection means being formed from the same elements.

Abstract: A method of manufacturing an angular-rate sensor by fabricating components of the angular-rate sensor on a silicon substrate, the components of the angular rate sensor including one or more masses, a support beam and buried conductors. Detection means are provided and the components are sealed in a cavity between a first glass plate and a second glass plate by anodic bonding. This enables angular rate sensors to be fabricated using low cost silicon wafers.

Abstract: A device for compensating for temperature dependent effects on an electronic sensor output signal. The device is capable of receiving a digital output signal from an electronic sensor and receiving a digital output signal from an electronic sensor and receiving a digital signal indicative of the temperature of the sensor.

Abstract: A micromechanical acceleration switch of silicon or similar materials, comprising a resilient electrode element, a proof mass, a housing and a spring element connecting the electrode element and the proof mass to the housing. The electrode element is mechanically connected adjacent to the proof mass. The proof mass has its centre of gravity located at a given distance from the axis through the spring element, so that when the proof mass is pivoting about the axis of the spring element in response to an externally applied acceleration, with a component in a direction parallel with the first axis. The electrode element also pivots about this axis. The pivot angle being essentially proportional to the magnitude of this component of the acceleration.

Abstract: A force sensor device for sensing seismic force due to changes in acceleration or pressure, comprising mass-spring system formed by a resonant flexible plate forming system mass and suspended from a rigid frame by means of at least two beams forming system springs and located at different sides of the plate, the plate, frame and beams being made of a silicon. A vibration excitation device upon application of electric signals at an elected one of a plurality of specific frequencies interacts with the plate to create a corresponding specific vibration mode therein, and a detection device detects any vibration frequency change in the plate due to interaction between a stress field thereon caused by the seismic force and a stress field thereon caused by the vibration mode.