Patents Assigned to Sensor Electronic Technology, Inc.
  • Surface Treatment with Ultraviolet Light
    Publication number: 20180339075
    Abstract: An approach for the treatment of surfaces in public places with ultraviolet light is disclosed. In one embodiment, a disinfection illuminator having ultraviolet radiation sources can irradiate a number of contact surfaces. A control unit can control the ultraviolet irradiation of the contact surfaces. The disinfection illuminator is suitable for a wide variety of devices that are used by the general public. Gas station pumps, door knobs, key pads, and bathrooms are illustrative of examples of some devices and places having commonly-used surfaces that can be treated by the disinfection illuminator.
    Type: Application
    Filed: May 25, 2018
    Publication date: November 29, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Robert M. Kennedy, Faris Mills Morrison Estes, Alexander Dobrinsky
  • Light emitting diode with polarization control
    Patent number: 10134948
    Abstract: An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: November 20, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska
  • Fluid-Based Light Guiding Structure and Fabrication Thereof
    Publication number: 20180329138
    Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.
    Type: Application
    Filed: July 16, 2018
    Publication date: November 15, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet illuminator
    Patent number: 10124081
    Abstract: A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: November 13, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Igor Agafonov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska, Saulius Smetona
  • Configuration for Optoelectronic Device
    Publication number: 20180323345
    Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary, which has a shape including a plurality of interconnected fingers. The n-type semiconductor layer can have a shape at least partially defined by the mesa boundary. A first n-type contact layer can be located adjacent to another portion of the n-type semiconductor contact layer, where the first n-type contact layer forms an ohmic contact with the n-type semiconductor layer. A second contact layer can be located over a second portion of the n-type semiconductor contact layer, where the second contact layer is formed of a reflective material.
    Type: Application
    Filed: July 2, 2018
    Publication date: November 8, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Maxim S. Shatalov, Mikhail Gaevski, Michael Shur
  • Stress Relieving Semiconductor Layer
    Publication number: 20180323071
    Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
    Type: Application
    Filed: June 29, 2018
    Publication date: November 8, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska
  • Heterostructure for an Optoelectronic Device
    Publication number: 20180315886
    Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
    Type: Application
    Filed: June 20, 2018
    Publication date: November 1, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
  • Multi-terminal device packaging using metal sheet
    Patent number: 10115659
    Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: October 30, 2018
    Assignee: Sensor Electronics Technology, Inc.
    Inventors: Yuri Bilenko, Michael Shur, Remigijus Gaska, Alexander Dobrinsky
  • Movable Ultraviolet Radiation Beam
    Publication number: 20180303134
    Abstract: A solution for irradiating a surface with ultraviolet radiation is provided. A movable optical element is utilized to form a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be irradiated. The movable optical element can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
    Type: Application
    Filed: July 2, 2018
    Publication date: October 25, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Light emitting device for emitting diffuse ultraviolet light
    Patent number: 10107944
    Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: October 23, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Ultraviolet Treatment of Region
    Publication number: 20180296712
    Abstract: A system for providing ultraviolet treatment to light absorbing liquids, such as biological liquids in a medical instrument, is disclosed. The system can include an ultraviolet impenetrable housing configured to enclose a portion of the medical instrument containing the biological fluid. At least one ultraviolet radiation source is integrated within the housing that emits ultraviolet radiation towards the medical instrument and the biological fluid. A control unit is configured to direct the ultraviolet radiation source to treat the biological fluid with ultraviolet radiation.
    Type: Application
    Filed: June 20, 2018
    Publication date: October 18, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Timothy James Bettles, Michael Shur
  • Ultraviolet transparent enclosure
    Patent number: 10099944
    Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: October 16, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Saulius Smetona, Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet transparent enclosure
    Patent number: 10093558
    Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: October 9, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Saulius Smetona, Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Light emitting device substrate with inclined sidewalls
    Patent number: 10096742
    Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: October 9, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jianyu Deng, Alexander Dobrinsky, Xuhong Hu, Remigijus Gaska, Michael Shur
  • Device Treatment
    Publication number: 20180280555
    Abstract: An ultraviolet illuminator for providing a cleaning treatment to a medical device is disclosed. The ultraviolet illuminator can include an ultraviolet cleaning treatment system that operates in conjunction with at least one ultraviolet radiation source and sensor to clean surfaces of a medical device for purposes of disinfection, sterilization, and/or sanitization. The ultraviolet illuminator is suitable for a wide variety of medical devices, instruments and equipment. Stethoscopes and medical instrument probes are illustrative examples of some devices that can be used with the ultraviolet illuminator.
    Type: Application
    Filed: June 4, 2018
    Publication date: October 4, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Timothy James Bettles, Alexander Dobrinsky, Michael Shur
  • Semiconductor heterostructure polarization doping
    Patent number: 10090433
    Abstract: A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Material growth with temperature controlled layer
    Patent number: 10090210
    Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Mikhail Gaevski, Igor Agafonov, Robert M. Kennedy, Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
  • Opto-electronic device with two-dimensional injection layers
    Patent number: 10090438
    Abstract: An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. A set of tilted semiconductor heterostructures is formed over the semiconductor structure. Each tilted semiconductor heterostructure includes a core region, a set of shell regions adjoining a sidewall of the core region, and a pair of two-dimensional carrier accumulation (2DCA) layers. Each 2DCA layer is formed at a heterointerface between one of the sidewalls of the core region and one of the shell regions. The sidewalls of the core region, the shell regions, and the 2DCA layers each having a sloping surface, wherein each 2DCA layer forms an angle with a surface of the semiconductor structure.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: October 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
  • Ultraviolet Gradient Sterilization, Disinfection, and Storage System
    Publication number: 20180272018
    Abstract: Ultraviolet radiation is directed within an area. The storage area is scanned and monitored for the presence of biological activity within designated zones. Once biological activity is identified, ultraviolet radiation is directed to sterilize and disinfect designated zones within the storage area.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 27, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Patterned Layer Design for Group III Nitride Layer Growth
    Publication number: 20180269355
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 20, 2018
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska