Abstract: A substantially planar light replication or re-transmission component having an incident light receiving surface and an opposed light emitting surface. The component comprises a substantially transparent planar substrate, one or more bipolar junction transistors provided on said substrate, the or each transistor comprising a collector region adjacent to said light receiving surface, an emitter region adjacent to said light emitting surface, and a base region between said collector region and said emitter region, and circuitry for biasing the bipolar transistors in use. The or each transistor is configured and biased in use so that said collector and base regions of the transistor operate as a photodiode whilst said base and emitter regions operate as a light emitting diode.

Abstract: An apparatus, system, and method for measuring a temperature gradient in a layered environment includes a container having a sidewall. An acoustic transducer is positioned on or proximate to an exterior surface of the sidewall of the container. A signal is transmitted from the acoustic transducer into the sidewall of the container. A reflected signal is received by the acoustic transducer, or another acoustic transducer positioned on or proximate to the exterior surface of the sidewall. A computerized device has a processor and a computer-readable memory. The processor is configured to measure a temperature gradient of the reflected signal using an angle of incidence and refraction of the reflected signal. The temperature gradient indicates a temperature of a material within the container.

Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Abstract: A pixel system for an imaging device can include one or more pixels comprising a pulse trigger assembly configured to detect a pulse at one or more threshold voltages, a timer system forming part of and/or connected to the one or more pixels, the timer system comprising one or more trigger switches. The pulse trigger assembly can be configured to activate the one or more trigger switches in response to detecting the pulse at the one or more threshold values. The pixel system can include a time-of-flight (TOF) module operatively connected to the one or more pixels and/or the timer system to determine a TOF based on an output from the timer system while simultaneously performing either or both passive imaging and asynchronous laser pulse detection.

Abstract: A composite working electrode comprising at least one polysulfone coated carbon material and at least one active redox species comprising an oxygen family atom bound in a ring structure, wherein the ring structure is substituted with a carbon ring, and wherein a moiety containing a hydrogen atom is attached to the carbon ring such that it is configured to provide for hydrogen bonding with the bound oxygen family atom and an electrochemical sensor comprising said composite working electrode.

Abstract: Embodiments are directed generally to an ionizing-radiation beamline monitoring system that includes a vacuum chamber structure with vacuum compatible flanges through which an incident ionizing-radiation beam enters the monitoring system. Embodiments further include at least one scintillator within the vacuum chamber structure that can be at least partially translated in the ionizing-radiation beam while oriented at an angle greater than 10 degrees to a normal of the incident ionizing-radiation beam, a machine vision camera coupled to a light-tight structure at atmospheric/ambient pressure that is attached to the vacuum chamber structure by a flange attached to a vacuum-tight viewport window with the camera and lens optical axis oriented at an angle of less than 80 degrees with respect to a normal of the scintillator, and at least one ultraviolet (“UV”) illumination source facing the scintillator in the ionizing-radiation beam for monitoring a scintillator stability comprising scintillator radiation damage.

Abstract: A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.

Abstract: Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems. In some embodiments, the MEMS devices and systems are used in imaging applications.

Abstract: A method of manufacturing an optical element, the method comprising: providing a substrate; providing a tool comprising, on a first side, a section defining a surface structure of the optical element; aligning the tool and the substrate with respect to each other and bringing the tool and a first side of the substrate together, with material between the tool and the substrate; positioning a transparent masking structure adjacent to the substrate onto which the material has adhered, the masking structure comprising a masking layer; emitting light through the masking structure to be incident on a portion of the material to cure said potion of the material, wherein the masking layer prevents light from being incident on a remaining portion of the material such that the remaining portion of the material is uncured; and removing the uncured remaining portion of the material.

Abstract: An Eddy current sensor device includes a sender member emitting a magnetic field and two sensing members. A central position sensing member includes a pair of central sense coils each being formed by a plurality of turns, and an edge position sensing member includes a pair of edge sense coils each being formed by a plurality of turns.

Abstract: A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.

Abstract: An optical sensor. The optical sensor comprises a substrate, a Fabry-Perot interferometer, and first and second photodetectors. The Fabry-Perot interferometer comprises a first mirror and a second mirror, and is mounted on the substrate such that light is transmitted through the interferometer to the substrate. The first and second photodetectors are configured to detect light transmitted through the etalon and the substrate. The first photodetector is sensitive to a first wavelength range, and the second photodetector is sensitive to a second wavelength range, and wherein the first and second wavelength ranges each correspond to a different mode of the interferometer.

Abstract: A photodetector array (PDA) system includes metal traces. A dielectric passivation layer defines a front side of a stack. An absorption layer is on a back side of the stack relative to the dielectric passivation layer. An array of pixels is included, each having a respective diffusion feature between the dielectric passivation layer and the absorption layer. The diffusion features are operatively connected to the absorption layer for photodetection. A metal trace runs between respective diffusion features. The metal trace is at a depth in the stack closer to the front side of the stack than the absorption layer. The dielectric passivation layer electrically insulates the metal trace from a front side surface of the stack.

Abstract: The present disclosure relates to a method for determining a volumetric and/or mass flow rate of a medium flowing in a tube, wherein a density and/or a viscosity of the fluid is/are determined using a MEMS sensor chip, wherein the medium flowing in the tube at least partially flows through a measuring channel of the MEMS sensor chip to determine the density and/or the viscosity of the fluid, and wherein the volumetric and/or mass flow rate of the medium is determined regardless of the medium based on a detected pressure drop over the measuring channel of the MEMS sensor chip and the density and/or viscosity determined by the MEMS sensor.

Abstract: An apparatus, system, and method monitors the motion, breathing, heart rate and sleep state of subjects, e.g., humans, in a convenient, non-invasive/non-contact, and low-cost fashion. More particularly, the motion, breathing, and heart rate signals are obtained through processing applied to a raw signal obtained in a non-contact fashion, typically using a radio-frequency sensor. Periods of sleep disturbed respiration, or central apnea can be detected through analysis of the respiratory signal. The mean heart rate, and derived information, such as the presence of cardiac arrhythmias can be determined from the cardiac signal. Motion estimates can be used to recognize disturbed sleep and periodic limb movements. The sleep state may be determined by applying a classifier model to the resulting streams of respiratory, cardiac and motion data. A means for display of the sleep state, respiratory, cardiac, and movement status may also be provided.

Abstract: A self-calibrating driver circuit (100, 300, 400, 500, 700) for a laser diode is disclosed. The circuit comprises a configurable current source (105, 305, 405, 505), a current mirror (115, 315, 415) configured to mirror a current from the configurable current source to a first transistor (120, 320, 420, 520, 720) and to a second transistor (125, 325, 425, 725), and a control circuit (140, 340, 440). The control circuit is configured to monitor a current through the first transistor at a first time, and to configure the current source based on the current through the first transistor to provide a desired current to the second transistor for driving the laser diode at a subsequent second time. A radiation-emitting device comprising one or more of the self-calibrating driver circuits and at least one radiation-emitting element is also disclosed.

Abstract: In accordance with at least one aspect of this disclosure, a photodiode structure can include a charge layer comprised of undoped InP, and a detector active area forming a junction with the charge layer and having edges configured to prevent edge breakdown. The location of the junction can be controlled through a diffusion of the detector active area or through an epitaxially grown doped region, for example. The photodiode structure can also include a charge control layer comprised of doped InP. The charge control layer can include a thickness and carrier concentration configured to achieve a predetermined gain, high speed, low dark current, and low break down voltage.

Abstract: In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the

Abstract: A sensing substrate and an electronic device are provided. The sensing substrate includes a sensing unit on a base substrate. The sensing unit includes a sensing element and a conductive pattern, the sensing element has a light incident surface and a back surface that are opposite and a side surface between the light incident surface and the back surface. The conductive pattern is on a side of the sensing element away from the base substrate, and has a hollow portion and a transparent conductive portion surrounding the hollow portion, an orthographic projection of the hollow portion on the base substrate is at least partially within an orthographic projection of the sensing element on the base substrate, and an orthographic projection of the transparent conductive portion on the base substrate at least partially overlaps with an orthographic projection of the side surface of the sensing element on the base substrate.