Abstract: This invention concerns an ellipsometer for the examination of a sample whereby the ellipsometer has a broadband light source on the emitter side and a detector on the receiver side for a receiver light beam reflected from the sample. A refractive optic for the generation of a measuring spot on the sample and an aperture arranged on the emitter side for the definition of a measuring spot on the sample. The spectroscopic ellipsometer of the present invention makes it possible to easily produce a precisely defined measuring spot on the sample.

Abstract: Characteristic values of transparent layers in the nanometer range, such a layer thickness and refractive index, can be determined with a spectro-ellipsometer. The task is to determine these values even with a less elaborate ellipsometer which only operates at one or a few wavelengths. In accordance with the invention, first at least one pair of the ellipsometric angles psi and delta are measured with at least one angle of incidence of the light beams on the sample for at least one ellipsometer wavelength, from which at least one characteristic value is determined for one ellipsometer period. Furthermore, the wavelength-dependent reflection of the probe in the wavelength range of interest is photometrically measured and from this the spectral dependency of the characteristic value is determined with the ellipsometrically measured characteristic value.

Abstract: In the atomic force microscopy method, the scanning system modified to provide high-frequency control is set into oscillation by electrical pulses having an amplitude that is adjustable and variable within a wide range. The pulses are so short that contact between the scanning tip and the sample is avoided. The pulse amplitude and/or form are varied in order to generate space charge zones in the semiconductor structures that are shaped differently within wide limits.