Abstract: Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A?)2An?1BnX3n+1, wherein A? is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion, the A? has an asymmetric ion distribution which may be rotated by an applied electric field, and n is a value between 1 and ?.

Abstract: Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A?)2An?1BnX3n+1, wherein A? is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion, the A? has an asymmetric ion distribution which may be rotated by an applied electric field, and n is a value between 1 and ?.

Abstract: Disclosed herein are a junction structure for wave propagation and a wave diode and a wave half-adder using the same. According to the present invention, the junction structure for wave propagation permits selective coupling of waves propagating through a junction plane between different wave propagation structures, whereby the wave junction structure, wave junction diodes and wave half-adders using waves including photons, surface plasmons, optomechanical phonons and their composite waves are realized to provide the same functions as those of electrical junction structures and application devices thereof.