Patents Assigned to Seoul Viosys Co., Ltd.
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Patent number: 11659790Abstract: A light module includes a substrate, at least one first light source, at least one second light source, and at least one third light source. The first light source is disposed on the substrate and emits a first type of light towards a plant. The second light source is disposed on the substrate and emits a second type of light towards the plant. The third light source is disposed on the substrate and emits a third type of light towards the plant. The first to third types of light have peak wavelengths in different wavelength bands. The first type of light is UV light or blue light in a short wavelength band, the second type of light is UV light, and the third type of light is visible light.Type: GrantFiled: January 26, 2022Date of Patent: May 30, 2023Assignee: Seoul Viosys Co., Ltd.Inventor: Se Ryung Kim
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Patent number: 11664410Abstract: A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.Type: GrantFiled: November 4, 2021Date of Patent: May 30, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Seong Gyu Jang, Ho Joon Lee, Chang Yeon Kim, Chung Hoon Lee
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Patent number: 11658263Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.Type: GrantFiled: March 5, 2021Date of Patent: May 23, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Ji Hoon Park, Ji Hun Kang, Chae Hon Kim, Yong Hyun Baek, Hyo Shik Choi
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Patent number: 11658275Abstract: A light emitting device including a first light emitting stack, a second light emitting stack, and a third light emitting stack each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first adhesive layer bonding the first light emitting stack and the second light emitting stack, and a second adhesive layer bonding the second light emitting stack and the third light emitting stack, in which the second light emitting stack is disposed between the first light emitting stack and the third light emitting stack, and one of the first adhesive layer and the second adhesive layer electrically connects adjacent light emitting stacks.Type: GrantFiled: October 21, 2020Date of Patent: May 23, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Chang Yeon Kim
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Patent number: 11658264Abstract: A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.Type: GrantFiled: September 18, 2020Date of Patent: May 23, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Dae Hong Min, Jun Ho Yoon, Woo Cheol Gwak, Jin Woo Huh, Yong Hyun Baek
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Publication number: 20230155096Abstract: A deep ultraviolet light-emitting diode is provided. A deep ultraviolet light-emitting diode according to one embodiment comprises: a substrate; an n-type semiconductor layer positioned on the substrate; a mesa which is disposed on the n-type semiconductor layer, comprises an active layer and a p-type semiconductor layer, and has a plurality of via-holes exposing the n-type semiconductor layer; n-ohmic contact layers contacting the n-type semiconductor layer in the via-holes; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-pad metal layer electrically connected to the n-ohmic contact layers; a p-pad metal layer electrically connected to the p-ohmic contact layer; an n-bump electrically connected to the n-pad metal layer; and a p-bump electrically connected to the p-pad metal layer, wherein the p-pad metal layer is formed so as to surround the n-pad metal layer.Type: ApplicationFiled: January 16, 2023Publication date: May 18, 2023Applicant: SEOUL VIOSYS CO., LTD.Inventors: Tae Gyun KIM, June Sik KWAK, Kyu Ho LEE
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Publication number: 20230143039Abstract: A light source unit for plant cultivation includes: a first light emitter emitting a primary light and a converter disposed on a path of the primary light to produce a first light, and a second light emitter emitting a second light, wherein combined light emitted from the first light emitter and the second light emitter produces a basic spectrum including at least three peak wavelengths, with a difference between relative intensities of at least two of the peak wavelengths being less than 20%.Type: ApplicationFiled: January 4, 2023Publication date: May 11, 2023Applicant: SEOUL VIOSYS CO., LTD.Inventors: Sang Min KO, Jin Won KIM
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Patent number: 11641008Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.Type: GrantFiled: September 27, 2018Date of Patent: May 2, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventors: Chung Hoon Lee, Sung Su Son, Jong Ik Lee, Jae Hee Lim, Motonobu Takeya, Seung Sik Hong
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Patent number: 11638400Abstract: A plant cultivation light source includes a plurality of light sources configured to be turned on or turned off depending on a selected plant and a growth stage of the selected plant, and a controller. The controller is operable to turn on the light sources during a light period such that the light sources are operable to emit a light having a spectrum with a plurality of peaks to the selected plant. The light period including a first period and a second period and the first period preceding or following the second period. The controller is operable to adjust the spectrum of the light to alternate the first period and the second period during the light period.Type: GrantFiled: August 29, 2022Date of Patent: May 2, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Se Ryung Kim, Sang Min Ko, Jin Won Kim, Hyun Su Song
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Patent number: 11628232Abstract: A sterilizer may include: a first pipe having an inner wall with a light reflecting property; a second pipe disposed in the first pipe so as to pass fluid therethrough and formed of a light transmitting material; and a plurality of UV LEDs arranged on the inner wall of the first pipe and configured to irradiate sterilization UV light onto the fluid.Type: GrantFiled: August 9, 2021Date of Patent: April 18, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventors: Seong Min Lee, Young Hwan Son, Jae Seon Yi, Jong Rack Kim, Ik Hwan Ko
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Patent number: 11631714Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.Type: GrantFiled: December 20, 2020Date of Patent: April 18, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventors: Chae Hon Kim, So Ra Lee
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Patent number: 11626554Abstract: A light emitting device including a first light emitting part, a second light emitting part, and a third light emitting part each including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween, a first contact member electrically contacting a first surface of the n-type semiconductor layer of the second light emitting part; and a second contact member electrically contacting the n-type semiconductor layer of the third light emitting part, in which the first contact member extends to the first light emitting part to electrically contact the n-type semiconductor layer of the first light emitting part, the first contact member and the second contact member overlap one another, and the second contact member has a width that gradually decreases in a downward direction.Type: GrantFiled: August 25, 2022Date of Patent: April 11, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Min Jang, Chang Yeon Kim
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Patent number: 11626391Abstract: A light emitting device including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pillars disposed adjacent to side surfaces of the first, second, and third LED stacks, the pillars including a first pillar commonly electrically connected to the first, second, and third LED stacks, and a second pillar, a third pillar, and a fourth pillar electrically connected to the first, second, and third LED stacks, respectively.Type: GrantFiled: January 15, 2021Date of Patent: April 11, 2023Assignee: Seoul Viosys Co., Ltd.Inventor: Jong Hyeon Chae
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Patent number: 11621253Abstract: A light emitting device including a first light emitting part having a first area, a second light emitting part having a second area, and a third light emitting part having a third area, in which the first light emitting part is disposed on the same plane as the second light emitting part, the third light emitting part is disposed over the first and second light emitting parts, and the third area is larger than each of the first and second areas.Type: GrantFiled: October 29, 2019Date of Patent: April 4, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Chan Seob Shin, Seom Geun Lee, Ho Joon Lee, Seong Kyu Jang
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Patent number: 11621370Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.Type: GrantFiled: May 24, 2021Date of Patent: April 4, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Yong Hyun Baek, Ji Hun Kang, Chae Hon Kim, Ji Hoon Park, So Ra Lee
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Publication number: 20230093367Abstract: A light emitting device and a light emitting module having the same are provided. A light emitting device includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which, upon operation, the active layer emits light of a first peak wavelength and light of a second peak wavelength in which the first peak wavelength may be within a range of about 400 nm to about 415 nm, and the second peak wavelength may be greater than or equal to about 440 nm.Type: ApplicationFiled: November 29, 2022Publication date: March 23, 2023Applicant: SEOUL VIOSYS CO., LTD.Inventors: Yong Hyun BAEK, Dae Hong MIN, Ji Hun KANG, Chung Hoon LEE
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Patent number: 11611021Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.Type: GrantFiled: September 27, 2018Date of Patent: March 21, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventors: Chung Hoon Lee, Sung Su Son, Jong Ik Lee, Jae Hee Lim, Motonobu Takeya, Seung Sik Hong
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Patent number: 11610939Abstract: A light emitting diode (LED) pixel for a display including a first LED stack, a second LED stack disposed on a partial region of the first LED stack, a third LED stack disposed on a partial region of the second LED stack, a first ohmic electrode disposed on the first LED stack and forming ohmic contact with the first LED stack, a second transparent electrode disposed between the second LED stack and the third LED stack and in ohmic contact with an upper surface of the second LED stack, and a third transparent electrode in ohmic contact with an upper surface of the third LED stack, in which the first ohmic electrode is laterally spaced apart from the second LED stack.Type: GrantFiled: July 2, 2021Date of Patent: March 21, 2023Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Hyeon Chae, Chung Hoon Lee, Seong Gyu Jang, Chang Yeon Kim, Ho Joon Lee
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Publication number: 20230081464Abstract: A light emitting diode according to an embodiment of the present disclosure includes a first conductivity type semiconductor layer, an active region including a plurality of active layers, a pre-strained layer disposed between the first conductivity type semiconductor layer and the active region, and including a V-pit generation layer (VGL), and a second conductivity type semiconductor layer disposed on the active region, in which the VGL has a thickness within a range of 250 nm to 350 nm.Type: ApplicationFiled: September 9, 2022Publication date: March 16, 2023Applicant: SEOUL VIOSYS CO., LTD.Inventors: Hong Jae YOO, Sung Ryong CHO
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Publication number: 20230070171Abstract: A light emitting diode and a method of fabricating the same are provided. The light emitting diode according to exemplary embodiments includes a lower n-type semiconductor layer, an active layer, a p-type semiconductor layer, a high-concentration n-type semiconductor layer, and an upper n-type semiconductor layer. The high concentration n-type semiconductor layer can have a higher n-type doping concentration than that of the lower or upper n-type semiconductor layer. Oxygen concentrations on a lower surface and an upper surface of the high-concentration n-type semiconductor layer may be substantially same. An electron blocking layer may be interposed between the active layer and the p-type semiconductor layer.Type: ApplicationFiled: September 7, 2022Publication date: March 9, 2023Applicant: SEOUL VIOSYS CO., LTD.Inventor: Chae Hon KIM