Abstract: A method for determining device yield of a semiconductor device design, comprises determining statistics of at least one device parameter from at least two device layer patterns; and calculating device yield from the statistics. At least one of the device layer patterns is neither a diffusion layer pattern nor a gate poly layer pattern.
Type:
Grant
Filed:
October 17, 2001
Date of Patent:
January 20, 2004
Assignees:
Cypress Semiconductor Corporation, Numerical Technologies, Inc., Sequoia Design Systems
Inventors:
Artur Balasinski, Linard Karklin, Valery Axelrad
Abstract: A method for determining device yield of a semiconductor device design, includes determining statistics of at least one MOSFET parameter from a gate pattern, and calculating device yield from the at least one MOSFET parameter. The method provides a direct simulation link from device layout to device performance.