Abstract: A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.
Type:
Grant
Filed:
January 19, 1988
Date of Patent:
October 31, 1989
Assignees:
Hitachi, Ltd., Service Engineering Co. Ltd.