Abstract: A reflow soldering apparatus, system, and method. The reflow soldering system may include a housing that is alterable between an open state and a closed state, the open state being used for loading and unloading of substrates and the closed state being used during operation. The system may also include a heating assembly located within the chamber and a cooling assembly that is spaced apart from the heating assembly. A support member may be included to support a substrate within the chamber. A first actuator unit may be operably coupled to either the heating and cooling assemblies jointly, or to the support member. Additionally, the system may include a control unit coupled to the first actuator unit to cause relative movement between the substrate and the heating and cooling assemblies. Thus, the substrate can move between the heating and cooling assemblies during the various stages of the reflow soldering process.

Abstract: An apparatus for removing oxide from a silicon substrate having a silicon substrate temperature including an evaporation chamber having at least one inlet and at least one outlet, whereby a carrier gas can be passed through the evaporation chamber from the inlet to the outlet, means for introducing a preselected charge of a hydrous cleaning solution into the evaporation chamber, means for heating the preselected charge of the liquid cleaning solution to evaporate the charge completely and thereby form a mixture of vapors with the carrier gas flowing through the evaporation chamber, a heat exchanger connected to the outlet of the evaporation chamber for lowering the temperature or the mixture to below the silicon substrate temperature, a process chamber for holding the silicon substrate, the process chamber having an inlet connected to the heat exchanger and an outlet and an exhaust controller connected to the outlet of the process chamber for removing gas mixture from the process chamber.

Abstract: A silicon substrate cleaning method and apparatus is presented in which a hydrous cleaning solution is caused to evaporate at a temperature at about or above its azeotropic temperature and a cleaning vapor thus produced is applied to a substrate to remove unwanted oxide. This method can be applied to a series of silicon substrates with consistent results, substrate to substrate, despite the azeotropic temperature characteristics of the hydrous cleaning solution. The method produces an oxide-free substrate without contaminants, particulates or residue.