Abstract: A device for wet treating flat plate-like substrates includes a spin-chuck (2) for holding and rotating the substrate, at least one dispenser (3) for dispensing a liquid onto at least one surface (W) of the substrate, a liquid collector (4) circumferentially surrounding the spin-chuck for collecting liquid, which is spun off the substrate during rotation, with at least two collector levels (L1, L2), for separately collecting liquids in different collectors (41, 42), a lifter (H) for moving spin-chuck (2) relative to liquid collector (4) substantially along the rotation axis (A), at least two exhaust levels (E1, E2) for separately collecting gas from the interior (40) of the liquid collector (4) and at least one exhaust controller (71), which is associated with at least one of the at least two exhaust levels, for selectively varying gas flow conditions in at least on of the at least two exhaust levels (E1, E2).

Abstract: Disclosed is a method of selective etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficient fast to generate a minimum mean velocity v parallel to the substrate's surface.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary force.

Abstract: In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instead of as in the prior art the etching medium being applied in drops, the etching medium is applied in a continuous flow with a flow rate of at least 0.4 l/min so that the etching medium covers the entire surface of the semiconductor substrate to be planarized. This technique yields a differentiated etching rate, the etching speed in the area of the fields between the trenches or contact holes being greater than in the area of the trenches themselves, so that as a result the coating applied to the semiconductor substrate is etched away more quickly than in the area of the trenches and finally material remains only in the area of the trenches or contact holes.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: A device is suggested which includes a carrier (1) for receiving the disk-shaped object (10), a liquid supply device (17) for applying liquid onto a disk-shaped object (10) located on the carrier (1), and a liquid catch ring (2), which is positioned essentially coaxially around the carrier (1) and is rotatable around the axis of the liquid catch ring (2).

Abstract: Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plate onto the exposed surface at a controllable rate. When the copper deposited on the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.

Abstract: Disclosed is a device for wet treating a flat plate-like substrate utilizing ultrasonic energy and a method associated with the device.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: A method, probe, and system for detecting presence of cavitation in a fluid and measuring cavitation density and intensity of a specific locale in the fluid. A first cavitation void and associated energy perturbation, produced in a first fluid, moves within the first fluid and is received at a very thin plate, which separates the first fluid from a second fluid and is part of a light-proof chamber containing the second fluid. An energy perturbation in the first fluid is received at the thin plate and produces at least one cavitation void or associated energy perturbation in the second fluid; and the energy perturbation in the second fluid is eventually converted into an electromagnetic signal. This signal is received by a photomultiplier and converted to an electronic signal that indicates the presence of cavitation. The system can distinguish between cavitation voids produced at one location and/or time interval and voids produced at another location and/or another time interval.

Abstract: An annular receptacle is described, particularly for a rotating carrier for receiving a disk-shaped object such as a semiconductor.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: An apparatus for treating wafer-shaped articles includes at least one linear arranged array of a plurality of at least two process units wherein in each such process unit one single wafer-shaped article can be treated, a cassette-holding unit for holding at least one cassette storing at least one wafer-shaped article therein and a transport system for picking a wafer-shaped article from a cassette and placing it into one of a process unit. The apparatus has a transport unit movably mounted on a linear track. The transport unit includes at least one holding member for holding a single wafer-shaped article in a substantially vertical plane parallel to the linear track.

Abstract: The invention relates to a method for the treatment of disk-like objects with one first liquid and at least one second liquid at least in a defined edge region of a disk-like object.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: An annular receptacle is described, particularly for a rotating carrier for receiving a disk-shaped object such as a semiconductor.

Abstract: The invention relates to a device for treating at least one bottom of a disc-shaped object.

Abstract: The invention concerns a device for wet etching an edge of a semiconductor disk.