Abstract: Disclosed is a device for the conversion of a series signal received in the form of a low-amplitude, high-frequency differential signal into n parallel signals. The device uses a scheme derived from that of a static memory cell as a sample-and-hold unit and amplifier. The device continues to perform well when the differential signal comprises noise in common mode.
Type:
Grant
Filed:
November 17, 1997
Date of Patent:
January 16, 2001
Assignee:
SGS-Microelectronics S.A.
Inventors:
Roland Marbot, Pascal Couteaux, Michel D'Hoe, Jean-Claude Le Bihan, Francis Mottini, R{acute over (e)}za Nezamzadeh, Anne Pierre-Duplessix
Abstract: A memory cell in an integrated circuit using CMOS technology includes the following in series: an N type selection MOS transistor and a PN semiconductor junction. The source of the transistor is connected to the N type zone of the junction by a metal contact made on at least a part of the N type zone. The method of control includes, in the programming mode, the application to the integrated circuit of a level of supply voltage greater than a nominal value, within an upper limit that is permissible for the integrated circuit, and the application of this level to the drain and the gate of the selection transistor. The selection transistor is made with a channel having a length smaller than or equal to the minimum length in the technology considered. Accordingly, the selection transistor is biased in the snap-back mode. The memory cell may be used in a memory circuit in matrix form.
Abstract: A dynamic isolation circuit belonging to a monolithic integrated circuit comprising lateral transistors and vertical transistors. The lateral transistors are isolated by an isolating region connected to an isolating potential (V.sub.iso), these lateral transistors being connected up to voltages of a first polarity relative to a reference voltage (GND), the power terminal connected up to the rear face normally being at a potential (V.sub.out) of the first polarity relative to the reference voltage.
Type:
Grant
Filed:
November 28, 1990
Date of Patent:
October 27, 1992
Assignee:
SGS-Microelectronics S.A.
Inventors:
Antoine Pavlin, Thierry Sicard, Marc Simon
Abstract: A control and monitoring circuit for a power switch comprises a first portion (20) connected to this switch and fed with reference to a floating voltage (V.sub.F) of an electrode of this switch, a second portion (10) connected to circuits external to the switch and fed with reference to a fixed voltage, a coder (40) arranged on the side of the second portion and a suitable decoder (50) arranged on the side of the first portion.
Abstract: A device for doubling or dividing by 2 the flow rate of series bits comprising a succession of first one-bit registers (R4-R0) actuated at a frequency F; a second register (R) actuated at a frequency 2F; an input terminal (IN) connected to the input of the first (R4) of the first registers and, through a first gate (T5), to an internal line (L) connected to the input of the second register; first multiplexers (M4-M1) connected to the input of each second (R3) to last (R0) of the first registers for selecting either the output of the preceding register, or the internal line, or still the output of the second register; a second multiplexer (M), which selects either the output of the last (R0) of the first registers, or the output of the second register, or filling bits; second transfer gates (T4-T0) between the output of each first register and the internal line; and means for controlling the various gates and multiplexers.