Patents Assigned to SGS Microellettronica S.p.A.
  • Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors
    Patent number: 4780431
    Abstract: The process provides for obtaining in the areas intended for the formation of the transistors windows in the intermediate oxide layer between the two silicon layers and, before final etching of the two silicon layers and the intermediate oxide, application of a mask formed in such a manner as to superimpose on the second silicon layer in the transistor areas coverings wider than the corresponding windows of the intermediate oxide layer.
    Type: Grant
    Filed: July 2, 1987
    Date of Patent: October 25, 1988
    Assignee: SGS Microellettronica S.p.A.
    Inventors: Franco Maggioni, Carlo Riva