Abstract: An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.

Abstract: A phase-lock loop circuit with fuzzy control, includes a phase comparator whose output is connected to a low-pass filter that drives a voltage-controlled oscillator. The phase comparator generates a signal that represents the phase difference between an input signal and a signal generated by the oscillator. The oscillator of the present invention is furthermore driven by a control signal generated by fuzzy control. The input of the fuzzy control is the signal that represents the phase difference.