Abstract: Programming and reading management architecture, particularly for test purposes, for memory devices of the non-volatile type, comprising at least two memory half-matrices, a bidirectional internal bus for the transmission of data to and from the memory half-matrices, a programming unit for each one of the at least two memory half-matrices, and a data sensing unit. The programming units are adapted to program the at least two memory half-matrices and the data sensing unit and the programming units communicate with the bidirectional internal bus to reroute onto the bus reading data and programming data of the at least two memory half-matrices.

Abstract: A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region, separated by a channel region which is overlaid by a thin layer of gate oxide. The gate oxide isolates a floating gate region from the substrate. The floating gate region is coupled to a control gate terminal. The floating gate region of the memory cell develops a first potential barrier between the semiconductor substrate and the gate oxide layer, and a second different potential barrier between the floating gate region and the gate oxide.

Abstract: A generator for generating a plurality of predetermined voltage values for non-volatile memories. The generator includes an input node, a plurality of circuit branches, and an output terminal. The input node has a reference voltage and is connected to at least one of the circuit branches. Each of the circuit branches has at least one active element to selectively and independently turn on and turn off each of the circuit branches by a voltage applied to a control terminal of each active element. The output terminal connects to at least one of the circuit branches and supplies a voltage level based on the reference voltage and a voltage drop across each activated circuit branch. Alternatively, the output terminal supplies a floating voltage level in the event of one or more of the active elements along each of the circuit branches being turned off so as to isolate the input node from the output terminal.

Abstract: A zero thermal budget manufacturing process for a MOS-technology power device.

Abstract: The invention relates to a row decoding circuit for an electrically programmable and erasable semiconductor non-volatile storage device of the type which includes a matrix of memory cells laid out as cell rows and columns and is divided into sectors, said circuit being input row decode signals and supply voltages in order to drive an output stage incorporating a complementary pair of high-voltage MOS transistors of the pull-up and pull-down type, respectively, which are connected to form an output terminal connected to the rows of one sector of the matrix, characterized in that a MOS transistor of the P-channel depletion type with enhanced gate oxide is provided between the output terminal and the pull-down transistor. The control terminal of the depletion transistor forms a further input of the circuit.

Abstract: A battery-charging electronic device comprises a current generator adapted to supply a charging current to a battery and a controlled current edge switch having a circuit for controlling the switching edges of current being flowed through a power transistor. The switching edge control circuit comprises a controlled edge variable voltage generator for generating a controlled edge voltage signal, a voltage/current converter for converting the voltage signal to a controlled edge current signal, and a driver circuit for the power transistor being input the controlled edge current signal to mirror, onto the power transistor, an output current which is proportional to the controlled edge current signal.

Abstract: The pressure sensor is integrated in an SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements and the electronic components integrated in the same chip, trenches are formed in the upper wafer of the substrate and extending from the surface to the layer of insulating material; the layer of insulating material is chemically etched through the trenches to form an opening beneath the diaphragm; and a dielectric layer is deposited to outwardly close the trenches and the opening. Thus, the process is greatly simplified, and numerous packaging problems eliminated.

Abstract: A high-speed bipolar-to-CMOS logic converter circuit, including an input stage, including a differential amplifier meant to be connected to a bipolar-logic circuit portion and to be supplied by the supply voltage of the bipolar-logic portion, and an output stage, which is supplied by the voltage of a CMOS-logic circuit portion, a dynamic level shifting circuit interposed between the input stage and the output stage, the output stage being connected to the CMOS-logic circuit portion.

Abstract: An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of the first transistor, and a quenching element having a terminal connected to a base terminal of the first transistor. The quenching element is formed within the base region or the emitter region of the first transistor.

Abstract: A capacitive array particularly for converters, comprising a plurality of unitary capacitors, the number of the unitary capacitors being equal to 2.sup.n, where n is the number of bits of the binary code required in output, the unitary capacitors being mutually connectable so as to obtain capacitors in which the capacitance ratio between one capacitor and the adjacent parallel-connected capacitor is equal to a factor of two. The invention is that the factor-of-two capacitance ratio of adjacent capacitors is achieved by mutually diagonally connecting in parallel the unitary-capacitance capacitors of the capacitive array in a preset number according to the capacitance value to be obtained.

Abstract: A fluid flow meter is of the type including a heated probe sensor of known electric resistance dipped into or swept by a fluid stream having a predetermined velocity. The sensor is capable of converting each flow velocity value to a voltage value, and is connected to a processor operating using fuzzy logic for producing the flow measurements. The sensor may be an NTC thermistor. The thermistor may be powered from a current generator, and the processor may include a neural network. The sensor may include at least two discrete thermistors, one being a hot thermistor and the other being a cold thermistor.

Abstract: The invention relates to a matrix of memory cells for a semiconductor integrated microcontroller. The matrix is of the type intended for accommodation between macrocells of the microcontroller so as to reduce the needed circuit area on the semiconductor. The matrix comprises memory cells which are organized into rows and columns, with the number of columns defining the matrix height. The matrix height is advantageously variable according to the number of bits intended for selecting the matrix column, while its width is dependent on the overall capacity of the memory.

Abstract: A semiconductor integrated, storage circuit device having at least a first enable terminal for enabling the device, and a first number of address terminals for inputting an external address formed of a corresponding first number of bits. The device comprises a plurality of data storage elements which are addressable by an internal address formed of a second number of bits larger than said first number, and further comprises address storage elements which are coupleable with their inputs to the first enable terminal for storing additional address bits. Thus, the internal address is comprised of the external address and the additional address bits.

Abstract: A vertical PNP transistor integrated in a semiconductor material wafer having an N type substrate and an N type epitaxial layer forming a surface. The transistor has a P type buried collector region astride the substrate and the epitaxial layer; a collector sinker insulating an epitaxial tub from the rest of the wafer; a gain-modulating N type buried base region astride the buried collector region and the epitaxial tub, and forming a base region with the epitaxial tub; and a P type emitter region in the epitaxial tub. An N.sup.+ type base sinker extends from the surface, through the epitaxial tub to the buried base region. The gain of the transistor may be modulated by varying the extension and dope concentration of the buried base region, forming a constant or variable dope concentration profile of the buried base region, providing or not a base sinker, and varying the form and distance of the base sinker from the emitter region.

Abstract: A circuit for shifting the voltage level of a digital signal, comprising a first pair of transistors of a first polarity, which are connected to a high-voltage line, and a second pair of transistors of a second polarity, which are connected to a ground line; the first and second pairs of transistors are connected to each other by means of the drain terminals of the respective transistors; an input voltage is applied to the gate terminals of the first pair of transistors. The circuit further includes a secondary circuit for leveling the gate voltages of the transistors of the first and second pairs, which is connected between the first and second pairs of transistors and whereto at least one reference voltage is applied. The circuit also includes an output stage, whose output is a voltage which is shifted in level with respect to the input voltage.

Abstract: A method for reducing the RAM requirement for temporarily storing a stream of data blocks in a coding/decoding system of information transferable by blocks, includes the steps of: compressing and coding the data by blocks through a tree search vector quantization (TSVQ); storing TSVQ compressed and coded data in the RAM; and decoding and decompressing in a subsequent reading of the data stored in the RAM the coded and compressed data, thereby reconstituting the stream of digital data blocks.

Abstract: A method for improving the intermediate dielectric profile, particularly for non-volatile memories constituted by a plurality of cells, including the following steps: forming field oxide regions and drain active area regions on a substrate; forming word lines on the field oxide regions; depositing oxide to form oxide wings that are adjacent to the word lines; opening, by masking, source regions and the drain active area regions, keeping the field oxide regions that separate one memory cell from the other, inside the memory, covered with resist; and removing field oxide in the source regions and removing oxide wings from both sides of the word lines.

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.

Abstract: A memory cell for devices of the EEPROM type, formed in a portion of a semiconductor material substrate having a first conductivity type. The memory cell includes source and drain regions having a second conductivity type and extending at the sides of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region, and a channel region extending between the region of electric continuity and the source region. The memory cell further includes an implanted region having the first conductivity type and being formed laterally and beneath the gate oxide region and incorporating the channel region.

Abstract: The ratio y(n) of two digital values, respectively a(n) and b(n), representing the n.sup.th elements of two respective sequences of digital input data representing two quantities slowly varying in time, is obtained by computingy(n)=y(n-1)+g*[a(n)-b(n)*y(n-1)]wherein g represents a multiplying factor. Within the domain of the z transform, the expression becomes:Y(z)=z.sup.-1 *Y(z)+g[A(z)-B(z)conv Y(z)*z.sup.-1where conv indicates an operation of convolution and which, for input sequences corresponding to signals filtered through a lowpass filter with a time constant greater than or equal to 3 msec is simplified to: ##EQU1## The approximation is exceptionally good and computation thereof may be achieved by the use of relatively simple hardware, without severely burdening the workload of a microprocessor.