Abstract: High-performance operational transconductance amplifier monolithically integrable with CMOS technology comprising a differential input stage connected to a pair of cascode stages and a differential output stage. The output stage comprises two output transistors whose gate terminals are connected to nodes for connection of the input stage and the cascode stages. The output terminals of the amplifier are connected to intermediate nodes of the cascode stages through capacitors.

Abstract: Plural modular elementary semiconductor power components are respectively contained within plural semiconductor chip regions of a same semiconductor slice. A metallic layer covers a first surface of the semiconductor slice and is commonly connected to anode electrodes of the plural elementary power components. Plural space apart quadrangular metallic layer regions respectively cover the plural semiconductor chip regions on a second surface of the semiconductor slice and are respectively connected to cathode electrodes of the plural elementary power components. Plural first metallic tracks are spaced apart from and surround the respective plural metallic layer regions on the second surface of the semiconductor slice. Each respective first metallic track is connected to a control electrode of the elementary power component contained within the semiconductor chip regions surrounded by the respective first metallic track.