Abstract: A memory device comprises an array of memory cells arranged in rows and columns, a plurality of gates for transmitting respective selection outputs of a row decoder to respective rows, a dummy column of dummy memory cells substantially identical to the memory cells, precharge means for precharging the columns and the dummy column at a precharge potential when no row is selected, and programming means for setting selected columns at respective programming potentials. The device comprises dummy memory cell preset means for presetting the dummy memory cells in a first logic state when no row is selected, dummy column programming means for setting the dummy column at a prescribed programming potential corresponding to a second logic state opposite to the first logic state, and first detector means for detecting that the dummy column has discharged from the precharge potential to the prescribed programming potential and for consequently enabling said plurality of gates.

Abstract: The system includes various circuit units each having a capacitor and a charging circuit for defining a quantity depending upon the ratio (I/C) between the charging current and the capacitance of the capacitors. In order to compensate automatically for deviations of the actual capacitances from the nominal capacitances due to fluctuations in the parameters of the integrated-circuit manufacturing process, the system has a phase-locked loop which uses one of the circuit units as an adjustable oscillator, and current transducer means which regulates the charging currents of the capacitors of the circuit units in dependence on the regulated charging current of the capacitor of the oscillator, or the error current of the PLL loop.