Abstract: A non-polar blue light LED epitaxial wafer based on an LAO substrate comprises the LAO substrate, and a buffer layer, a first non-doped layer, a first doped layer, a quantum well layer, an electron barrier layer and a second doped layer that are sequentially arranged on the LAO substrate. A preparation method of the non-polar blue light LED epitaxial wafer includes: a) adopting the LAO substrate, selecting a crystal orientation, and cleaning a surface of the LAO substrate; b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate; and c) sequentially forming a non-polar m face GaN buffer layer, a non-polar non-doped u-GaN layer, a non-polar n-type doped GaN film, a non-polar InGaN/GaN quantum well, a non-polar m face AlGaN electron barrier layer and a non-polar p-type doped GaN film on the LAO substrate by adopting metal organic chemical vapor deposition.

Abstract: A non-polar blue light LED epitaxial wafer based on an LAO substrate comprises the LAO substrate, and a buffer layer, a first non-doped layer, a first doped layer, a quantum well layer, an electron barrier layer and a second doped layer that are sequentially arranged on the LAO substrate. A preparation method of the non-polar blue light LED epitaxial wafer includes: a) adopting the LAO substrate, selecting a crystal orientation, and cleaning a surface of the LAO substrate; b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate; and c) sequentially forming a non-polar m face GaN buffer layer, a non-polar non-doped u-GaN layer, a non-polar n-type doped GaN film, a non-polar InGaN/GaN quantum well, a non-polar m face AlGaN electron barrier layer and a non-polar p-type doped GaN film on the LAO substrate by adopting metal organic chemical vapor deposition.