Abstract: A silicon carbide semiconductor device, in particular a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor with segmentally surrounded trench Schottky diode, includes a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor and a trench Schottky diode. The trench Schottky diode has a perpendicularly disposed trench extending in a first horizontal direction, a metal electrode filled into the trench, and a plurality of doped regions disposed segmentally and extending in a second horizontal direction around the trench. The first horizontal direction is substantially orthogonal to the second horizontal direction, a side wall and a bottom wall of the metal electrode in the trench forms a Schottky junction, and the current flowing from the metal electrode is restricted between adjacent doped regions.
Type:
Grant
Filed:
December 11, 2020
Date of Patent:
January 9, 2024
Assignee:
SHANGHAI HESTIA POWER INC.
Inventors:
Chien-Chung Hung, Kuo-Ting Chu, Chwan-Yin Li
Abstract: The present invention provides a silicon carbide (SiC) semiconductor device integrating a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bidirectional voltage clamping circuit. An object of protecting a device is achieved by using the simple structure above, effectively preventing device damage that may be caused by a positive overvoltage and a negative overvoltage between a gate and a source.
Abstract: A silicon carbide power device is controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.
Type:
Grant
Filed:
September 3, 2020
Date of Patent:
November 23, 2021
Assignee:
SHANGHAI HESTIA POWER INC.
Inventors:
Fu-Jen Hsu, Chien-Chung Hung, Kuo-Ting Chu, Chwan-Ying Lee
Abstract: A silicon carbide power device controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.
Type:
Grant
Filed:
March 2, 2020
Date of Patent:
August 31, 2021
Assignee:
Shanghai Hestia Power, Inc.
Inventors:
Fu-Jen Hsu, Chien-Chung Hung, Kuo-Ting Chu, Chwan-Ying Lee