Patents Assigned to Shanghai Hua Hong Electronics Co., Ltd.
  • Method for manufacturing trench type superjunction device and trench type superjunction device
    Patent number: 8716111
    Abstract: A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: May 6, 2014
    Assignee: Shanghai Hua Hong Electronics Co., Ltd.
    Inventors: Fei Wang, Shengan Xiao, Wensheng Qian