Patents Assigned to Shanghai Huahong (Group) Co., Ltd
  • Damascene structure having a reduced permittivity and manufacturing method thereof
    Patent number: 7602038
    Abstract: A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier in advance as an etch stop, forming a copper damascene interconnect structure, forming an air gap, and depositing a photosensitive passivation material on the air gap.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: October 13, 2009
    Assignees: Shanghai IC R&D Center, Shanghai Huahong (Group) Co., Ltd
    Inventor: Jun Zhu