Abstract: The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining a brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: a linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and an amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating the rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; a temperature of the annealing being 100° C. to 800° C., preferably 300° C. to 500° C., and a duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.

Abstract: A preparation method of a high-thermal-conductivity and net-size silicon nitride ceramic substrate includes the following steps: (1) mixing an original powder, a sintering aid, a dispersant, a defoamer, a binder, and a plasticizer in a protective atmosphere to allow vacuum degassing to obtain a mixed slurry; (2) subjecting the mixed slurry to tape casting and drying in a nitrogen atmosphere to obtain a first green body; (3) subjecting the first green body to shaping pretreatment to obtain a second green body; (4) subjecting the second green body to debonding at 500° C. to 900° C. to obtain a third green body; and (5) subjecting the third green body to gas pressure sintering in a nitrogen atmosphere at 1,800° C. to 2,000° C. to obtain the high-thermal-conductivity and net-size silicon nitride ceramic substrate.

Abstract: A sintered composite ceramic includes: a lithium-garnet major phase; and a lithium-rich minor phase, such that the lithium-rich minor phase has LixTiO(x+4)/2, with 0.66?x?4. The sintered composite ceramic may exhibit a relative density of at least 90% of a theoretical maximum density of the ceramic, an ionic conductivity of at least 0.35 mS·cm?1, or a critical current density (CCD) of at least 1.0 mA·cm?2.

Abstract: A battery includes a substrate; a composite cathode disposed on the substrate; a solid-state electrolyte disposed on the composite cathode; and a lithium anode disposed on the solid-state electrolyte, such that the composite cathode comprises a gel polymer electrolyte layer and a porous cathode active material layer. A method of forming a cathode for a solid-state battery includes mixing an active cathode material, at least one of a conductive carbon component and an electronic conductive component, and a polymer binder to form a slurry; immersing the slurry in an alcohol reagent to form a porous disc structure by phase conversion; and immersing the porous disc structure in a liquid electrolyte to form the cathode.

Abstract: A modified garnet-type solid electrolyte, includes: a garnet-type solid electrolyte; a modification layer, such that the modification layer is formed on at least one side of the garnet-type solid electrolyte, and possesses a three-dimensional crosslinking structure comprising at least one strongly acidic lithium salt and at least one weakly acidic lithium salt. A method of forming a modified garnet-type solid electrolyte, includes: exposing a garnet-type solid electrolyte in air to form a pre-passivation layer; mixing solutions of strong acid and weakly acidic salt to form a mixed solution; chemically treating at least one side of the garnet-type solid electrolyte with the mixed solution; and forming a modification layer on the at least one side of the garnet-type solid electrolyte.

Abstract: A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 K?/sq.

Abstract: The present application discloses a dense lead metaniobate piezoelectric ceramic and a preparation method therefor. The chemical composition of the lead metaniobate piezoelectric ceramic is Pb1-xNb2O6, wherein x represents the Pb vacancy concentration of A sites in a tungsten bronze crystal structure, and x is greater than 0.00 and smaller than or equal to 0.20.

Abstract: The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1?x?y+?/2)Ce2xM(2y??)Si(1??)M?O5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x?0.05, the value of y is 0<y?0.015, and the value of ? is 0???10?4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

Abstract: The present application relates to a magnesium oxide based dielectric ceramics with ultrahigh dielectric breakdown strength and a preparation method thereof. The composition of the magnesium oxide based dielectric ceramic material comprises: (1?x)MgO—xAl2O3, wherein 0<x?0.12 and x is a mole percentage. The material has a specific composite structure with magnesium aluminate spinel acting as a second phase surrounding a principal crystalline phase, MgO.

Abstract: A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

Abstract: The present application relates to a barium strontium titanate-based dielectric ceramic material, a preparation method, and application thereof. The composition of the barium strontium titanate-based dielectric ceramic material comprises: aBaTiO3+bSrTiO3+cTiO2+dBi2O3+eMgO+fAl2O3+gCaO+hSiO2, wherein a, b, c, d, e, f, g, and h are the molar percentage of each component, 20?a?50 mol %, 15?b?30 mol %, 10?c?20 mol %, 0?d?10 mol %, 0?e?35 mol %, 0?f?6 mol %, 0?g?6 mol %, 0?h?1 mol %, and a+b+c+d+e+f+g+h=100 mol %.

Abstract: Disclosed are a yttrium-doped barium fluoride crystal and a preparation method and the use thereof, wherein the yttrium-doped barium fluoride crystal has a chemical composition of Ba(1?x)YxF2+x, in which 0.01?x?0.50. The yttrium-doped BaF2 crystal of the present invention has improved scintillation performance. The yttrium doping may greatly suppress the slow luminescence component of the BaF2 crystal and has an excellent fast/slow scintillation component ratio. The doped crystal is coupled to an optical detector to obtain a scintillation probe which is applicable to the fields of high time resolved measurement radiation such as high-energy physics, nuclear physics, ultrafast imaging and nuclear medicine imaging.

Abstract: Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag2-?X?S1-?Y?(I), in which 0??<0.5, 0??<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Abstract: The present invention relates to a surface modification method for a polyether-ether-ketone material. The method combines physical and chemical methods, and comprises the steps of performing plasma immersion ion implantation on the surface of the polyether-ether-ketone material with argon as an ion source, and then, soaking the polyether-ether-ketone material treated by plasma immersion ion implantation in a hydrogen peroxide aqueous solution, hydrofluoric acid aqueous solution, or ammonia water to make the surface of the modified polyether-ether-ketone material have nanoparticles, shallow nanoporous structures, and/or ravined nanostructures.

Abstract: The present application relates to a large-size, high-dielectric breakdown strength titanium oxide based dielectric ceramic material, a preparation method and application thereof. The composition of the titanium oxide based dielectric ceramic material comprises: a CaTiO3+b SrTiO3+c TiO2+d Al2TiO5+e SiO2, wherein a, b, c, d, and e are the mole percentage of each component, 15?a?35 mol %, 0?b?2 mol %, 30?c?84 mol %, 0.5?d?25 mol %, 0.5?e?15 mol %, and a+b+c+d+e=100 mol %.

Abstract: A solution cathode glow discharge plasma-atomic emission spectrum apparatus and method capable of performing direct gas sample introduction and used for detecting a heavy metal element. The solution cathode glow discharge plasma-atomic emission spectrum apparatus comprises a high-voltage power source, a ballast resistor, a hollow metal anode and a solution cathode. The hollow metal anode is connected to a positive electrode of the high-voltage power source by means of the ballast resistor, and the solution cathode is connected to a negative electrode of the high-voltage power source by means of a graphite electrode. The plasma apparatus is further configured in such a manner that a discharge region is formed between the hollow metal anode (10) and the solution cathode, and the hollow metal anode further serves as a sample introduction pipeline, so that gas to be detected enters the discharge region and is excited.

Abstract: A controllable splitting method comprises: electrically connecting a photoconductive switch between input and output ends of a current pulse; connecting a time domain signal of the input current pulse to an external triggering port of a pulse laser; emitting a laser pulse to irradiate the switch; when no current pulse is input, failing to receive an external triggering signal and not outputting the laser pulse, the switch being in an off state without the irradiation of the laser pulse, and no current being output; when the current pulse is input, triggering the pulse laser to synchronously output the laser pulse on a time domain, irradiating the switch so that the switch is in an on state and the current pulse is output; and forming, at the output end, a current pulse signal synchronous with a time domain of the input end and having a split waveform.

Abstract: A testing method for the sheet resistance of a sheet material, comprising: mounting two circular or annular electrodes on the surface of the sheet material; measuring the resistance between the electrodes; and calculating the sheet resistance of the sheet material on the basis of a theoretical model from the resistance measured between the electrodes, the diameters of the electrodes, and the distance between the electrodes. The method places no restriction on the diameters of the electrodes; also, the annular electrodes work as effectively as circular electrodes, and annular electrodes may improve the contact between the edges of the electrodes, and the sheet material.

Abstract: A testing method for the sheet resistance and contact resistance of connecting point of a sheet material, comprising: mounting at least four small electrodes on the surface of the sheet material; measuring the resistance between the electrodes; and calculating the sheet resistance and electrode contact resistance of the sheet material on the basis of a theoretical model from the resistance measured between the electrodes and the distances between the electrodes. As a main feature, the testing method is a convenient nondestructive testing method for the sheet resistance and electrode contact resistance of the sheet material, and has no strict requirement on the distribution of electrodes.