Abstract: The present invention relates to a preparation method of a P-type high-resistance and ultra-high-resistance Czochralski monocrystalline silicon substrate. According to the present invention, an oxygen concentration in a silicon wafer is controlled to match with a resistivity, so as to realize that a conductive type of the silicon substrate does not change after a device is manufactured, and that the silicon substrate has a high resistivity. The oxygen concentration and the resistivity in silicon crystal can be adjusted separately or together; and operation is flexible, and a yield of a high-resistance silicon crystal is greatly improved.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: A SOI wafer is disclosed. The SOI wafer may be characterized by surface roughness of a top silicon layer of the SOI wafer is less than 4 ?, thickness uniformity of the top silicon layer is within ±1%, and a total number of particles on a surface of the top silicon layer of the SOI wafer, measured with setting of 37 nm of SPx detection threshold, is less than 100.

Abstract: A use of nitrogen-doped carbon fluorescent quantum dots in preparation of aerobic glycolysis detection products is provided. The carbon-nitrogen fluorescent quantum dots are selected from one or more of C3N4 quantum dots, C2N quantum dots, and C3N quantum dots. The aerobic glycolysis detection products are reagents, based on a final volume of the reagents, the reagents comprise the carbon-nitrogen fluorescent quantum dots with a final concentration of 1 ?g/mL-1 mg/mL. The present disclosure realizes fluorescent labeling of NAD+ in living cells using the carbon-nitrogen fluorescent quantum dots, thus achieving fluorescent labeling and imaging of cells having aerobic glycolysis, which has the advantages of low cost, high efficiency, rapidity, and high accuracy.

Abstract: A superconducting integrated circuit design method based on placement and routing by different-layer JTLs comprises: cutting a bias line at a cell data interface of a cell library, and reserving a position of a via; placing and arranging cells on a logic cell layer according to a schematic circuit logic diagram; connecting clock lines of each of the cells by using a JTL and a splitter of the logic cell layer; and performing data connection on each of the cells by using JTLs of a transverse JTL routing layer and a longitudinal JTL routing layer which are not in the same layer as the logic cell layer, wherein the JTL of the transverse JTL routing layer is used as a transverse routing cell for data between the cells, the JTL of the longitudinal JTL routing layer is used as a longitudinal routing cell for data between the cells.

Abstract: The present invention provides a laser, including: a medium, having a ground state, an intermediate state, and an excited state in ascending order of energy; an excitation system, configured to excite electrons in the medium from the ground state to the intermediate state; and an excitation laser, configured to drive electrons in the intermediate state at different spatial positions in the medium to the ground state through a stimulated emission process with a fixed phase relationship, to generate a laser with a shorter relative wavelength. Due to the use of an excitation laser to drive electrons from the intermediate state, the photons generated by the stimulated emission have coherence, thereby forming a laser.

Abstract: The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction.

Abstract: The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 ?·cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

Abstract: The present invention provides a temperature-insensitive Mach-Zehnder interferometer, including: a first mode converter; a second mode converter, located on one side of the first mode converter and with a distance from the first mode converter; and a connecting arm, located between the first mode converter and the second mode converter, one end of the connecting arm is connected with the first mode converter, and the other end is connected with the second mode converter. The connecting arm includes a straight waveguide connecting arm. The temperature-insensitive Mach-Zehnder interferometer of the present invention can be configured to be insensitive to temperature by adjusting parameters such as the width and thickness of the connecting arm.

Abstract: The present application provides a terahertz spectrum measurement system and a method for analyzing a terahertz spectrum of a substance, wherein the terahertz spectrum measurement system comprises: two terahertz quantum cascade lasers with their emission ports arranged oppositely; and a vacuum hood arranged between the emission ports of two terahertz quantum cascade lasers. The terahertz spectrum measurement system and the method for analyzing a terahertz spectrum of a substance realize a separate terahertz dual frequency comb while retaining the advantages of the on-chip dual frequency comb system, which solves the problem that the on-chip dual frequency comb cannot directly measure the terahertz spectra of substances.

Abstract: The present invention provides a method of growing a single-crystal silicon, comprising: loading a batch of polysilicon material in a crucible of a furnace, heating the crucible to melt the polysilicon material into a mass of silicon melt, confirming a liquid surface of the mass of silicon melt, applying a superconducting magnetic field to the mass of silicon melt with a magnetic field generator and adjusting a position of the magnetic field generator to position a maximum point of the superconducting magnetic field within a predetermined range under the liquid surface, and dipping a seed crystal into the silicon melt, and pulling the seed crystal during rotation of the seed crystal to crystallize the single crystal under the seed crystal until forming an ingot of single-crystal silicon. Oxygen content in the ingot is controlled through positioning the maximum point of the superconducting magnetic field under the liquid surface.

Abstract: A method for characterizing graphene on a platinum substrate, including: coating a methylene blue developing solution to a platinum substrate having a surface covered with graphene, so that the methylene blue developing solution reacts with hydrogen-containing gas under catalysis of platinum to yield colorless methylene white; after the pressure is restored, methylene white in the exposed area of platinum substrate will quickly turn blue when it is oxidized into methylene blue by reacting with oxygen in the air under catalysis of platinum. Thus, color difference can be formed to facilitate the observation of the graphene. The characterization method is highly reproducible and simple, and can be used to characterize graphene with a large area on a platinum substrate. The characterization method does not damage the graphene and platinum substrate, has no negative impact on the quality of graphene, and the platinum substrate can be recycled to reduce costs.

Abstract: The present invention provides a selector material, a selector unit and a preparation method thereof and a memory structure, wherein the selector material comprises at least one of Te, Se and S, that is, the selector material is selected from a simple substance such as Te, Se and S or compounds composed of any of these elements, further, the performance can be improved by doping with elements such as O, N, Ga, In, As and the like, or oxides, nitrides and carbides or other dielectric materials. The selector material in the present invention has the advantages of high turn-on current, simple material, fast switching speed, good repeatability and low toxicity when the selector material is used in the selector unit, which is beneficial to achieving high-density three-dimensional information storage.

Abstract: A micro-power wireless access method and apparatus for the Internet of things for power transmission and transformation equipment involves a time synchronization process, a traffic channel access process, a control channel configuration information access process, and a control channel burst information access process. In the time synchronization process, an aggregation node determines a delay parameter and other parameters based on a timeslot in which traffic information randomly transmitted by a sensing terminal is located, and the sensing terminal adjusts transmission time of a corresponding frame based on the parameters. The traffic channel access process adopts a mode in which one-way reporting is mainly used, to minimize working time of a sensor. The present disclosure realizes limited two-way communication on a control channel, supports configuration of a sensor cycle, a threshold, and other parameters, and supports a retransmission mechanism on the control channel for important alarm information.

Abstract: The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.

Abstract: The present application provides a semiconductor substrate and a preparation process thereof. In the present application, the polysilicon layer includes the first polysilicon layer and the second polysilicon layer formed separately to generate the less stress, the more random grain orientation and the smaller grain size, maintain the high grain boundary density, and enhance the charge capture. By the combination of different deposition temperature and the combination of two cooling steps after each isothermal annealing treatment, the rate of contraction between the first polysilicon layer and the second polysilicon layer and the initial semiconductor substrate is decreased, and the thermal mismatch of semiconductor substrate is reduced. The stretch between the polysilicon layer and the initial semiconductor substrate can be reduced to prevent the warpage of the semiconductor substrate. Thereby, the stress generated during the growth process of the polysilicon layer can be further reduced.

Abstract: A method for characterizing graphene on a platinum substrate, including: coating a methylene blue developing solution to a platinum substrate having a surface covered with graphene, so that the methylene blue developing solution reacts with hydrogen-containing gas under catalysis of platinum to yield colorless methylene white; after the pressure is restored, methylene white in the exposed area of platinum substrate will quickly turn blue when it is oxidized into methylene blue by reacting with oxygen in the air under catalysis of platinum. Thus, color difference can be formed to facilitate the observation of the graphene. The characterization method is highly reproducible and simple, and can be used to characterize graphene with a large area on a platinum substrate. The characterization method does not damage the graphene and platinum substrate, has no negative impact on the quality of graphene, and the platinum substrate can be recycled to reduce costs.

Abstract: The present disclosure relates to a method for treating a wafer surface. By controlling the gas composition at each stage of the treatment process, and corresponding processes of heating and annealing, and cooling and thinning by oxidation, the final wafer is enabled to have a surface roughness of less than 5 ?. This effectively reduces the cost of the final treatment process and has good application prospects.

Abstract: A SOI wafer and a method of final processing the same is disclosed. Rapid thermal annealing comprises a first heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a first annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture. Long-time thermal annealing comprises a second heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a second annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture.

Abstract: The present application provides a method of surface treatment of a SOI wafer comprising: providing a SOI wafer comprising a substrate, atop silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 ?; removing a native oxide layer from a surface of the top silicon layer by conducting a first isothermal annealing process at a first target temperature, wherein the first isothermal annealing process is under atmosphere of a mixture of argon and hydrogen; and planarizing the surface of the top silicon layer by conducting a second isothermal annealing process at a second target temperature, wherein the second target temperature is higher than the first target temperature, and the second isothermal annealing process is under atmosphere of argon.