Abstract: A high-voltage-resistant rectifier with standard CMOS transistors is disclosed in present invention. In a bridge full-wave rectifier comprising four MOS transistors, extra transistors are connected in series between the transistors which endure high voltage and the input to decrease the voltage imposed on the gate of them; moreover, the present invention provides a way to divide voltage imposed between the gate and the source of the said transistors by connecting in series with extra transistors, so it is achieved to implement a high-voltage-resistant rectifier with standard low voltage CMOS transistors without additional process complexity, and decreases manufacture and process costs.