Abstract: The present invention provides a Technology Computer Aided Design (TCAD) emulation calibration method of a Silicon On Insulator (SOI) field effect transistor, where process emulation Metal Oxide Semiconductor (MOS) device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; based on the process emulation MOS device structures, the process emulation MOS device structures are calibrated according to a Transmission Electron Microscope (TEM) test result, a secondary ion mass spectrometer (SIMS) test result, a Capacitor Voltage (CV) test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor.