Patents Assigned to Sharp Kabushiki
  • Patent number: 6677925
    Abstract: In an active-matrix LCD device, a coupling signal in accordance with a sum of outputs of data signal lines is detected by a detection-use bus line crossing each of the data signal lines. The coupling signal is superimposed via a coupling capacitor on an input signal that serves as a reference, and is inverted and amplified by a inverting-amplifying section, then it is outputted as a common electrode signal. With this, a waveform that corresponds to a sum of the outputs is coupled with the common electrode signal. As a result, the common electrode signal is caused to have an influence that corresponds to a fluctuation of a potential of the common electrode due to outputs of the data signal lines and that is reverse in phase, thereby enabling to prevent horizontal shadow due to the outputs of the data signal lines. Thus, it is possible to realize an active-matrix-type LCD device in which horizontal shadow can be prevented with low power consumption.
    Type: Grant
    Filed: September 6, 2000
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takafumi Kawaguchi, Toshihiro Yanagi
  • Patent number: 6677184
    Abstract: In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Ikuo Kohashi
  • Patent number: 6678491
    Abstract: An optical electric charge removal device mountable on an image formation apparatus of an electrophotographic system for removing residual charges on a photosensitive member by light irradiation is provided. The optical electric charge removal device includes a point light source provided in the image formation apparatus; and an optical conductor, mountable on a process cartridge which is detachable from the image formation apparatus, for guiding light incident from the point light source to the photosensitive member.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Eiichi Kido, Toshiaki Ino, Takayuki Yamanaka, Toshio Yamanaka, Hideaki Kadowaki, Mitsuyoshi Terada, Kaori Fujii, Takashi Kitagawa
  • Patent number: 6678023
    Abstract: A liquid crystal projector in which light is effectively used and an excellent picture can be obtained is provided. In the liquid crystal projector, dichroic mirrors arranged at different angles are used to separate white light into beams of light of three primary colors of R, G, and B, and the respective beams of light are incident on microlenses at different angles. The respective beams of light of the three primary colors are distributed by the microlenses to optical components corresponding to pixels, and highly collimated light beams can be obtained by the optical components. Since the highly collimated light beams are made incident on the pixels of the liquid crystal panel, the beams can be certainly made incident on desired pixels.
    Type: Grant
    Filed: August 3, 2000
    Date of Patent: January 13, 2004
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Shunpei Yamazaki, Yoshiharu Hirakata, Takeshi Nishi, Shunichi Naka, Shuhei Tuchimoto, Hiroshi Hamada, Yoshihiro Mizuguchi
  • Patent number: 6677937
    Abstract: A driving method is disclosed which prevents a remaining image from occurring at the time of turning off of the display device. In particular, the driving method for the display device is such that, when the power-supply signal is switched from ON state to OFF state, non-lit-up display data is outputted so that all the pixels are switched to the non-lit-up display. The display elements are maintained in the non-lit-up display state over the entire surface of the display up to completion of a period corresponding to a predetermined number of frames after the frame in which the power-supply OFF signal has been detected. The driving operation, which takes place immediately before the completion of the output of the non-lit-up display data within the non-display period, is maintained until the scanning start signal has risen, and the driver output control signal is switched from ON state to OFF state in synchronism with the rise of the scanning start signal.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masahiro Takahashi, Yoshiyuki Kokuhata
  • Patent number: 6677801
    Abstract: An internal power voltage generating circuit of a semiconductor device includes a voltage dividing circuit composed of a single field effect transistor and a plurality of resistances incorporated into a semiconductor chip. The voltage dividing circuit divides an externally supplied power voltage into two types of voltage by conducting or non-conducting the single field effect transistor. The divided voltages are supplied as an internal power voltage to a plurality of field effect transistors incorporated into the semiconductor chip.
    Type: Grant
    Filed: April 9, 2002
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Narakazu Shimomura
  • Patent number: 6678298
    Abstract: A semiconductor laser chip has an emission point on a PN junction thereof. The emission point is located at a distance of 80 &mgr;m or less along the PN junction from a lateral side surface of the semiconductor laser chip.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Akira Ariyoshi
  • Patent number: 6678219
    Abstract: Featured is a magneto-optical storage medium including: a first magnetic layer constituted by a perpendicularly magnetized film; a second magnetic layer constituted by a perpendicularly magnetized film so as to be exchange coupled to the first magnetic layer; and a third magnetic layer magnetostatically coupled to the first and second magnetic layers at elevated temperatures, magnetization of the first magnetic layer being copied to the third magnetic layer. The second magnetic layer produces a greater peak net magnetization, has a higher Curie temperature than the first magnetic layer and produces a leaking magnetic flux. The structure enhances magnetostatic coupling forces acting between the first magnetic layer and the second magnetic layer and also between the first magnetic layer and the third magnetic layer.
    Type: Grant
    Filed: November 2, 2000
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Junji Hirokane, Noboru Iwata
  • Patent number: 6677212
    Abstract: A gate oxide film (23), a gate electrode (24) and a gate cap insulating film (25) are stacked on an active region of a p-type semiconductor substrate (21), and an insulating side wall (29) is formed, followed by BF2 ion implantation. Thus, a surface of the p-type semiconductor substrate becomes amorphous so that single-crystal silicon is prevented from epitaxially growing in the next process of depositing polysilicon (33). Halo regions (32) are formed using the BF2 ions having the opposite conductivity to a source/drain to reduce the short-channel effect. The substrate is then passed through a nitrogen purge chamber having a dew point kept at −100° C. to remove water molecules completely, and polysilicon (33) is deposited. Because native oxide is prevented from growing at an interface between the active region and the polysilicon, source/drain regions (34) formed later by implantation and diffusion of n-type impurity ions achieve a uniform junction depth.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Fumiyoshi Yoshioka, Masayuki Nakano, Hiroshi Iwata
  • Patent number: 6676256
    Abstract: Provided is a printer for a wrapping material making it possible to record time data such as the date and time when an article was wrapped on the surface of the wrapping material for wrapping the article. This printer includes a wrapping material storing section for storing a wrap film, which is a wrapping material for wrapping an article. There is a clock for measuring time to generate time data, and an output for recording the time data on the surface of the wrap film. When the wrap film is discharged from the wrapping material storing section, the output records the time data on the surface of the wrap film. Therefore, on the wrap film with which the article such as food is wrapped, the time data, for example, the date and time when this food was wrapped are recorded. Thus, a user can check accurately the date and time the wrapping occured.
    Type: Grant
    Filed: February 23, 2001
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kenzo Yoshida, Hideo Matsuda
  • Publication number: 20040004862
    Abstract: A semiconductor memory device is provided, which comprises a memory array comprising a plurality of memory cells, a page buffer section for temporarily storing data to be written into the memory array, and a masking section for masking at least a portion of data read from the page buffer section.
    Type: Application
    Filed: July 1, 2003
    Publication date: January 8, 2004
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Ken Sumitani
  • Publication number: 20040003840
    Abstract: The present invention allows a crystalline photovoltaic module having a super straight type structure in which a light-receiving surface side-sealing EVA layer 2, a photovoltaic cell matrix 3, a back surface side-sealing EVA layer 4 and a back surface-sealing weatherproof film 5 are laminated sequentially in this order on a light-receiving glass 1 and these components are formed into an integral piece to be reused after it has been used in the market for a long time by extending the lifetime of the photovoltaic module. The regeneration method includes peeling the back surface-sealing weatherproof film 5, laminating a new back surface side-sealing EVA layer 8 and a new back surface-sealing weatherproof film 9 in a portion in which the film has been peeled, and then curing for crosslinking the new back surface side-sealing EVA layer 8 that is laminated.
    Type: Application
    Filed: June 5, 2003
    Publication date: January 8, 2004
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Akimasa Umemoto
  • Patent number: 6674299
    Abstract: The voltage output terminals of a semiconductor integrated circuit are connected to the first ends of resistors while the second ends of the resistors are connected to a common signal line. Taking advantage that the potential of the signal line presents the mean voltage value of the voltages output from all the voltage output terminals, the deviation of the potential at each voltage output terminal from the mean value and the difference of this mean value from the ideal value are determined, whereby the suitability of the output voltage from each of the output terminals is examined.
    Type: Grant
    Filed: January 2, 2002
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Hiroyuki Toyoda
  • Patent number: 6674701
    Abstract: By adding a predetermined offset value which is not less than 0 to, to the value of a readout power at a time when readout power control operations are temporarily suspended, i.e., at a time when an optical head initiates a seek operation, with an adder, this latter value being stored in a readout power value storage circuit, because an optical recording medium readout apparatus makes it possible to cause the value of the readout power at the time when readout power control operations resume, i.e., at the time of completion of the seek operation performed by the optical head, to avoid abnormal power domains in which change in amplitude ratio with respect to change in readout power is not monotonically decreasing, it is made possible to avoid abnormal conditions such as occurrence of lag in response during readout power control operations.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tetsuya Okumura, Shigemi Maeda
  • Patent number: 6674988
    Abstract: Infrared light emitted from an infrared light-emitting diode and reflected by a toner that is an object to be detected. Then, the reflection light is received by a photodiode. A signal detection circuit is composed of an amplifier for converting an output current into a voltage, an amplifier in which a circuit constant is optimized for detection of color toner density, an amplifier in which a circuit constant is optimized for detection of black toner density and an amplifier in a circuit constant is optimized for detection of toner misregistration. These amplifiers are connected to each other in two steps. The first step amplifier's output is further amplified by the second step amplifiers to output as a color toner detection output voltage Vo1, a black toner detection output voltage Vo2, and a toner misregistration detection output voltage Vo3.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Shinya Kawanishi
  • Patent number: 6674095
    Abstract: In a compound semiconductor surface stabilizing method, a compound semiconductor is immersed in a solution containing sulfur ions, and then, the compound semiconductor is immersed in a solution containing cations, which react with sulfur to form a sulfide. These immersing steps form a sulfur layer and a sulfide layer in this order on a surface of the compound semiconductor.
    Type: Grant
    Filed: May 31, 2000
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Masanori Watanabe
  • Patent number: 6674517
    Abstract: A light beam from a light-emitting device is applied to a measurement object via a collimator lens and an object lens, and reflected light concentrated via the object lens among the reflected light from a light spot formed on the measurement object is split and concentrated by a beam splitter and a light-receiving lens. The reflected lights from the two regions inside the light spot located at a prescribed interval on a straight line parallel to the travel direction of the measurement object are made to pass separately through two pinholes, respectively, and the resulting reflected lights are respectively made incident on two light-receiving sections. Then, on the basis of the outputs of the two light-receiving sections, the travel speed and the quantity of movement of the measurement object are measured by an operating unit.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akifumi Yamaguchi, Hisakazu Sugiyama
  • Patent number: 6673659
    Abstract: A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: January 6, 2004
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Michinori Iwai
  • Patent number: 6674503
    Abstract: A liquid crystal display element includes a pair of substrates made of plastic, a liquid crystal sandwiched between the pair of substrates, and a plurality of spacers for maintaining a gap d between the pair of substrates, which are sandwiched between the pair of substrates, and when x is an average value of thickness of the plurality of spacers in a state without a load in such a direction that the plurality of spacers are sandwiched between the pair of substrates, d<x≦1.1d is satisfied. Further, in the liquid crystal display element, a numerical density of the spacers is set to be not less than 240 pieces/mm2 and not more than 300 pieces/mm2. Further, in the liquid crystal display element, an elastic modulus of the spacers is set to be larger than that of the pair of substrates. As a result, in the liquid crystal display element, color shading is suppressed while suppressing generation of bubbles in a vacuum region and reduction in contrast, thus obtaining desirable display quality of a display image.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hirotaka Niiya, Ippei Inou
  • Patent number: 6671918
    Abstract: A substrate cleaning apparatus of the present invention includes one sheet roll wound with one end of a polishing sheet that is arranged to be in contact with the surface of a liquid crystal panel, and the other sheet roll for rolling up the polishing sheet from the other end. The substrate cleaning apparatus further includes a rotating unit provided with a motor, a belt, and a rotation shaft for rotating the polishing sheet and the pair of sheet rolls with respect to the liquid crystal panel. Thus, the substrate cleaning apparatus can be provided which is capable of reducing an operation time required for removing foreign matters, enhancing operation efficiency, stably and reliably removing foreign matters, and restraining operation time even if the size of the substrate increases.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: January 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomofumi Matsuno, Mitsuo Uemura, Kazuya Yoshimura