Abstract: A TFT substrate (100A) includes an oxide layer (15) which has a semiconductor region (5) and a conductor region (7) and in which the semiconductor region overlaps at least partially with a gate electrode (3a) with a first insulating layer (4) interposed between them, a protective layer (8) which covers the channel region of the semiconductor region, and a transparent electrode (9) which is arranged to overlap with at least a portion of the conductor region when viewed along a normal to the substrate (2). An end portion of the oxide layer is at least partially covered with the protective layer.