Abstract: An exposure method is provided. In (a) of FIG. 8, exposure is performed while a substrate 20 is being transported in the Y direction, to simultaneously form first layers 81 and layers 91 in first non-display regions 51 and the display region, respectively, on the substrate 20. Next, in (b) of FIG. 8, the substrate 20 is rotated by 90 degrees, and exposure is performed while the substrate 20 is being transported in the X direction, to form second layers 82 in second non-display regions 52. Subsequently, in (c) of FIG. 8, proximity exposure is performed once on the substrate 20 to simultaneously form third layers 83 on the first layers 81 in the first non-display regions 51, fourth layers 84 on the second layers 82 in the second non-display regions 52, and layers 92 in the display region 40.

Abstract: Disclosed is a light-emitting device (1) including a light-emitting element (2) emitting primary light, and a light converter (3) absorbing a part of the primary light emitted from the light-emitting element (2) and emitting secondary light having a longer wavelength than the primary light. The light converter (3) contains a green light-emitting phosphor (4) and a red light-emitting phosphor (5). The green light-emitting phosphor (4) is composed of at least one phosphor selected from a divalent europium-activated oxynitride phosphor substantially represented by the following formula: EuaSibAlcOdNe and a divalent europium-activated silicate phosphor substantially represented by the following formula: 2(Ba1-f-gMIfEug)O.SiO2, while the red light-emitting phosphor (5) is composed of at least one phosphor selected from tetravalent manganese-activated fluoro-tetravalent metalate phosphors substantially represented by the following formulae: MII2(MIII1-hMnh)F6 and/or MIV(MIII1-hMnh)F6.

Abstract: The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01?Zn/(In+Zn)?0.22.

Abstract: Provided is an edge-light illuminating device in which a deformation is prevented from occurring in a reflection sheet due to thermal expansion of the reflection sheet. An edge-light illuminating device (3) of the present invention is arranged to illuminate a liquid crystal display panel (2) from a back side of the panel, and includes a light guide plate (7), a light source (5) that faces an edge face (72) of the plate and is arranged to project light onto the edge face, a case (4) arranged to house the plate and the light source, and a reflection sheet (6) laid on a bottom face (41) of the case and sandwiched between the bottom face and a back face (71) of the plate housed in the case, wherein the reflection sheet includes a slot portion (61) disposed along a direction that the reflection sheet expands by heat generated by the light source.

Abstract: The sterilizing effect of particle irradiation on microorganisms for the sterilizing treatment thereof can be evaluated. The evaluation can be done by supplying microorganisms in the space inside a container (8), allowing particles (7) for the sterilizing treatment of microorganisms to irradiate the microorganisms, sampling the microorganisms by a sampling means (6) after the irradiation of the particles (7) and measuring the sampled microorganisms. The microorganisms as the subject for the sterilizing treatment can be a combination of one or more members selected from the group consisting of bacteria, mycete, viruses and allergens. As the particles, for example, positive ions, negative ions, and gases of positive ions and negative ions in mixture, charged particles such as ? rays and ? rays, various plasma gas particles, particles such as ozone and radical particles, and particles of chemical agent can be used.

Abstract: Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer (104) formed on the surface of a substrate (101), and a thin film transistor and a thin film diode that are formed on the insulating layer (104). A portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (109) for the thin film diode, is provided with a first recessed and projected pattern (105). Meanwhile, a portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (108) for the thin film transistor, is not provided with the first recessed and projected pattern (105).

Abstract: A backlight unit 12 according to the present invention includes LEDs 17 as light sources, an LED board 18 mounting the LEDs 17 thereon, a chassis 14 that stores the LED board 18 therein and includes an attachment hole 14e, a body portion 24 that sandwiches the LED board 18 between the body portion 24 and the chassis 14 and holds the LED board 18, and a board holding member 20 including an attachment portion 25 that is protruded from the body portion 24 toward the chassis 14 to be inserted into the attachment hole 14e, and the board holding member 20 is configured to be rotatable along a plate surface of the chassis 14 between a holding position at which the attachment portion 25 overlaps with an edge of the attachment hole 14e in a plan view and sandwiches the edge of the attachment hole 14e between the attachment portion 25 and the body portion 24 and a non-holding position at which the attachment portion 25 does not overlap with the edge of the attachment hole 14e in a plan view and attaching and detaching

Abstract: The light-emitting device includes: a substrate which has a single layer structure in which a conductive member is partially provided on a surface of the substrate; a plurality of light-emitting elements which are directly provided on the surface of the substrate so as to be electrically connected with the conductive member; a first light reflection resin layer; a second light reflection resin layer which is provided in a looped shape on the surface of the substrate so as to surround an area in which the plurality of light-emitting elements are provided; and a sealing resin which covers the plurality of light-emitting elements.

Abstract: In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.

Abstract: An image displaying apparatus executes FRC process, wherein image deterioration in a boundary portion between a still image display area and its periphery is prevented. When the magnitude of the motion vector of an object in the periphery of a still image display area is less than a predetermined threshold value, an interpolation frame generation portion defines the pixel values of a still image display area and its periphery of the frame #n as the interpolation pixel values of a still image display area and its periphery of the interpolation frame #I. When the magnitude of the motion vector of the object is equal to or greater than the predetermined threshold value, the pixel values of the still image display area and its periphery of the frame n+1 are defined as the interpolated pixel values of the still image display area and its periphery of the interpolation frame #I.

Abstract: Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).

Abstract: A heat exchanging system (10) comprises a heat exchanger (1) including a tube (2) through which a first fluid flows and a plurality of fins (3) made from thin plates attached to the tube (2) and arranged parallel to each other in the direction along which the tube (2) extends, and a fan (4) for introducing a second fluid between the fins (3). The fin (3) includes concave parts (7) and convex parts (8) continuously and cyclically formed in a zigzag line. The concave parts (7) and the convex parts (8) are so arranged as to extend in the direction crossing the flow direction of the second fluid flowing between the fins (3), and the flow of the second fluid flowing between the fins (3) is made to be cyclically variable.

Abstract: A liquid crystal display device (100A) according to the present invention includes a pixel (10) including first and second subpixels (10a, 10b) and a first CS bus line (24a), which is associated with the first subpixel. The first subpixel includes a liquid crystal capacitor (13a) and a first storage capacitor (22a). The second subpixel includes a liquid crystal capacitor (13b). A first CS signal voltage applied to the first storage capacitor (22a) through the first CS bus line (24a) is an oscillation voltage, of which one period is shorter than one vertical scanning period, and has first and second potentials that define a maximum amplitude and a third potential between the first and second potentials. When a gate signal voltage Vg supplied to the gate bus line (12) that has been high goes low, the first CS signal voltage Vcsa supplied to its associated first CS bus line (24a) is at the third potential.

Abstract: A backlight unit which is a lighting device is provided with: a diffusion plate; a chassis having rising sections which are provided at the outer periphery of the main flat surface thereof and supporting the diffusion plate; light-emitting modules disposed at the main flat surface and the rising sections of the chassis and applying light to the diffusion plate; and reflecting sheets disposed at the main flat surface and the rising sections of the chassis and reflecting the light, which is emitted from the light-emitting modules, toward the diffusion plate. The reflecting sheets have formed thereon sloped sections for reflecting, toward the diffusion plate, the light emitted from the light-emitting modules disposed at the rising sections.

Abstract: An illumination device according to the present invention is provided with: a chassis (14); a cold-cathode tube (17); an optical member (15); a clamping member (30) that is provided at an aperture edge (14b) of the chassis (14), has a supporting section (36) and a frame (16), and moves together with the deformation of the chassis (14); and a buffer part (31) that is disposed between the optical member (15) and the frame (16), wherein the buffer part (31) is provided with a plurality of mountain-shaped protrusions (32) arrayed in parallel in the peripheral direction of the aperture edge (14b) and having a mountain shape in a cross section and a rectangular shape in a plan view, the mountain-shaped protrusion having top parts thereof contacting the optical member (15), and wherein, in the mountain-shaped protrusions (32), of the two inclined surfaces constituting each mountain-shaped protrusion (32) in a cross-sectional view, a first inclination angle (?1) formed by the optical member (15) and a first inclined

Abstract: An image forming apparatus executes the steps of: calculating an end time of the job of which execution is instructed, and determining if the end time of the job is before the start time of power outage; specifying, if it is determined that the end time of the job is not before the start time of power outage, a part of processing of the job that can be completed before the start time of power outage; starting the job, if it is determined that the end time of the job is before the start time of power outage; and starting the part of processing of the job if it is determined that the end time of the job is not before the start time of power outage. Thus, abnormal termination of an active job due to power outage can be prevented.

Abstract: Uneven brightness is less likely to occur in a backlight unit. In a backlight unit 12, suppose that a maximum value and a minimum value of light reflectance of at least a first surface 30a of a diffuser plate 30 facing a hot cathode tube 17 are defined as Rmax Rmin, respectively, a rising proximal position BP of each rising portion 20b of a reflection sheet 20 is provided to overlap with an area of the diffuser plate 30 having light reflectance R that satisfies the Expression given below, and a rising distal position EP of each rising portion 20b is provided not to overlap with an area of the diffuser plate 30 having the light reflectance R that satisfies the Expression given below.

Abstract: Disclosed is an image processor generating a three-dimensional image easily three-dimensionally viewed by, and hardly causing fatigue of, an observer, and easily adjusting a three-dimensional effect of an arbitrary portion in the three-dimensional image. The disparity correction portion 101 corrects a disparity of the input disparity image within a predetermined range and outputs a disparity image storing the corrected disparity to the disparity conversion portion 103. The disparity conversion portion 103 converts the disparity of the disparity image such that a disparity corresponding to the image of the main object determined by the main object determination portion 102 reaches a predetermined value, and outputs the disparity image obtained after the conversion to an image generation portion 104. The image generation portion 104 generates an image for the left eye and an image for the right eye based on the input disparity image and the input captured image, and outputs the images to a display apparatus.

Abstract: An active matrix device is provided which includes N array elements arranged spatially in a sequence of first through Nth array elements (where N is an integer ?2); the N array elements each including a write input for receiving a corresponding write input signal which controls operation of the array element, and a sense circuit for sensing a property of the array element and providing a sensor output based on the sensed property; and further including a manipulation circuit including logic circuitry connecting the sensor output from an nth array element in the sequence directly to the write input of an (n+1)th array element and configured to provide the write input signal to the write input of the (n+1)th array element based on the sensor output from the nth array element.

Abstract: The present invention provides a display device which is arranged so that when an image is scrolled, a noise pattern does not easily overlap the image. The display device includes a display region that includes a region in which an arrangement pattern (U1) including X i-th pixels arranged next to one another in the row direction for each data color, the arrangement pattern being repeated in the row direction, the X being represented by X=A/2+A·Q, where Q is an integer of 0 or greater, and is defined for each row.