Abstract: A method for transferring a thin film. The method includes: providing a supply substrate; performing ion implantation process to form an ion layer at the defined depth in the supply substrate, the ion depth defining a thin layer in the supply substrate: a thin film, which is a defined portion of the supply substrate by implanted ions, and a remnant substrate, which is a remaining portion of the supply substrate without the thin film; and performing a direct wafer bonding process to join a handle substrate onto the supply substrate. The method for transferring the thin film can improve wafer bonding; a larger wafer is transferred to the handle wafer with a uniform thin layer thickness and a larger surface roughness, and the bonded wafer can be treated from 100° C. to 450° C. to achieve different service lives.

Abstract: A preparation method of a multilayer monocrystalline silicon film sequentially includes: first, taking two monocrystalline silicon slices of which surfaces are clean, processing the surfaces of the silicon slices by a plasma activation technology, and then, performing pre-bonding; transferring the bonded silicon slices to an annealing furnace having a temperature of 200-300° C., and performing annealing for 6-10 hours to avoid generating a transition region and to completely bond the two silicon slices; thinning the annealed bonded slices to a desired target thickness; and taking the thinned SOI slice as Si-1, taking another monocrystalline silicon slice as Si-2, and performing the first three steps on Si-1 and Si-2 to obtain the multilayer monocrystalline silicon film. The silicon slices that are processed by the plasma activation technology have a large pre-bonding force during bonding. A favorable bonding effect is achieved after annealing.

Abstract: An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.

Abstract: A method for preparing an SOI wafer by using rapid thermal processing includes: taking a silicon wafer as a raw material, sequentially performing process steps of oxidation, H+ implantation and bonding to obtain a bonded wafer with an H+ implantation layer; and then splitting the bonded wafer by using rapid thermal processing and microwaves to obtain a required SOI wafer. In the present invention, an SOI film after wafer splitting has better thickness uniformity and lower roughness. The present invention may improve lattice damage after implantation and reduce SOI surface defects after wafer splitting and thus improve the SOI surface quality. The present invention is high in wafer-splitting speed and thus reduces silicon wafer contamination. The present invention has high efficiency and an excellent comprehensive technical effect.

Abstract: A method for changing an edge STIR of a silicon-on-insulator (SOI) by film coating, including: using a silicon wafer as a raw material, and performing oxidizing, injecting, bonding, splitting, and film coating in sequence. If a blue film is used, the required thickness of the blue film is 0-0.5 mm; the film is coated to the back surface of the silicon wafer; an oxide layer on the edge of the front surface of the silicon wafer is removed by concentrated hydrofluoric acid; the film on the back surface of the SOI is removed by concentrated SC1; washing is performed by SC1 and SC2, the STIR is smaller than 0.3 ?m. According to the present invention, the oxide layer on the edge is removed by using the blue film coating manner, the SITR is relatively small, the chamfering process is replaced, and the STIR of the obtained SOI is better.

Abstract: A method for preparing an SOI wafer by using rapid thermal processing includes: taking a silicon wafer as a raw material, sequentially performing process steps of oxidation, H+ implantation and bonding to obtain a bonded wafer with an H+ implantation layer; and then splitting the bonded wafer by using rapid thermal processing and microwaves to obtain a required SOI wafer. In the present invention, an SOI film after wafer splitting has better thickness uniformity and lower roughness. The present invention may improve lattice damage after implantation and reduce SOI surface defects after wafer splitting and thus improve the SOI surface quality. The present invention is high in wafer-splitting speed and thus reduces silicon wafer contamination. The present invention has high efficiency and an excellent comprehensive technical effect.

Abstract: A preparation method of a multilayer monocrystalline silicon film sequentially includes: first, taking two monocrystalline silicon slices of which surfaces are clean, processing the surfaces of the silicon slices by a plasma activation technology, and then, performing pre-bonding; transferring the bonded silicon slices to an annealing furnace having a temperature of 200-300° C., and performing annealing for 6-10 hours to avoid generating a transition region and to completely bond the two silicon slices; thinning the annealed bonded slices to a desired target thickness; and taking the thinned SOI slice as Si-1, taking another monocrystalline silicon slice as Si-2, and performing the first three steps on Si-1 and Si-2 to obtain the multilayer monocrystalline silicon film. The silicon slices that are processed by the plasma activation technology have a large pre-bonding force during bonding. A favorable bonding effect is achieved after annealing.

Abstract: A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.

Abstract: An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.

Abstract: The invention disclosed a method of manufacturing the thin film, which belongs to the technological field of SOI wafer manufacture. By growing a layer of dielectric material (silicon oxide) on the provided high-resistivity silicon wafer, then to grow a layer of amorphous silicon on the dielectric material, to transfer a layer of silicon oxide to the amorphous silicon, to make the mono crystalline silicon exist on the oxidation layer, so that a SOI wafer with a layer of amorphous silicon is manufactured. The process above is completed in specific process conditions. The manufactured thin film, e.g. SOI wafer with amorphous silicon layer, is used main for RF apparatus.