Patents Assigned to ShenZhen Brthrborder Semiconductor Materials Co., Ltd.
  • Publication number: 20240019781
    Abstract: The present invention provides a dispersion resin and a preparation method therefor, and a low-temperature cured photoresist composition. The dispersion resin is represented by a formula (2): (Z-A)n—Rm (2), n=1-5, m=1-5, and n+m<=6; Z represents H, or an acrylic copolymer containing an amino group, an epoxy group, an alkyl group having 1-14 carbon atoms, a cycloalkyl group having 3-14 carbon atoms or an aryl substituent; R represents C, N, CH groups, or at least one of linear alkyl, aliphatic cycloalkyl, aryl and heteroaryl containing 6-14 carbon atoms; A is represented by formula (3): In formula (3), W is linked to Z, the carboxyl group is linked to R, and W represents at least one of an H atom, a substituted or unsubstituted alkyl group having 1-14 carbon atoms, an alkylene oxide group having 2-6 carbon atoms, a substituted or unsubstituted aryl group and a substituted or unsubstituted heteroaryl group having 3-14 carbon atoms.
    Type: Application
    Filed: September 25, 2023
    Publication date: January 18, 2024
    Applicant: ShenZhen Brthrborder Semiconductor Materials Co., Ltd.
    Inventors: Meidi ZHONG, Yulong CHEN, Xiangjun YUN, Wei LI, Guangfu REN, Xia YANG