Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes an array substrate, a light-emitting device layer, and a color filter layer. The color filter layer includes a plurality of color resists, a light-shielding layer arranged between two adjacent color resists, and a plurality of auxiliary electrodes arranged on the light-shielding layer. The present application, through providing the auxiliary electrodes electrically connected to a cathode layer on the light-shielding layer and in cooperation with light-shielding units having different heights, reduces a voltage drop of an electrode close to a center of a display, thereby improving uniformity of display brightness and enhancing user's visual effect.

Abstract: An LCD display device and a series connected quantum dot light-emitting device are disclosed. Using N-type charge generation layer and a P-type charge generation layer disposed in a stacked manner, only one pair of electrodes are required to realize a series connection of QLED device and OLED device. The combination of the two types of diode light-emitting devices can overcome their own weakness to form a light-emitting device having narrow full width at half maximum, high color saturation and high luminous efficiency.

Abstract: The present disclosure discloses a manufacturing method of a thin film transistor, including: forming a gate layer on a substrate; forming a gate insulating layer on the gate layer and the substrate; forming an active layer on the gate insulating layer; and simultaneously forming a source and a drain formed on the active layer by a combination of a chemical plating method and a lift-off method. In the present disclosure, the chemical plating method is combined with the lift-off method, so that the wet-etching method is not used for forming the source and the drain, and thus the IGZO at the channel is not required to be protected by the etching-stop-layer. Therefore, while simplifying the production process, but also can reduce costs.