Abstract: Provided is a co-planar oxide semiconductor TFT substrate structure, in which an active layer includes a main body and a plurality of short channels connected to the main body and are separated with a plurality of strip metal electrodes to make the active layer possess higher mobility and lower leak current. Also provided is a manufacture method of the co-planar oxide semiconductor TFT substrate structure, in which with the plurality of strip metal electrodes formed between the source and the drain, which are separately positioned, as deposing the oxide semiconductor layer, the plurality of short channels can be formed between the source and the drain. The method is simple and does not require additional mask or process to obtain the active layer structure different from prior art. The manufactured actively layer possesses higher mobility and lower leak current. Thus, the performance of the TFT element can be improved.

Abstract: The present disclosure relates to a scanning driving circuit and a LCD. The scanning driving circuit includes first driving circuits and second diving circuits, each of the first driving circuits connects with each of the second diving circuits, and the first driving circuit and the second diving circuit are alternately arranged. Each of the first driving circuit and second diving circuit includes a pull-up module, a pull-up controlling module for driving the pull-up module, a reference voltage end, and a first pull-down maintaining unit. Each of the first driving circuit also includes a first pull-down maintaining controlling unit. The first and second driving circuit share the first pull-down maintaining control unit of the first driving circuit. In this way, the scanning driving circuit is stable, and the structure of the circuit is simple. The power consumption may be reduced and the border of the LCD may be narrowed down.

Abstract: The disclosure is related to a display module comprising a display panel and a cover. The display panel includes a black baffle frame defining a display region on the display panel. The cover is disposed on the display panel, and a side portion of the cover is on the black baffle frame. The display module further includes a visible region extension member disposed between the side portion of the cover and the black baffle frame. The disclosure further discloses a display device having the display module. In the disclosure, a bright region is formed on the black baffle frame at the periphery of the display region, and the bright region and the display region connect with each other as a whole to form an integrated screen such that viewers visually feel that the border of the display device is narrowed and the visible region of the screen is extended.

Abstract: The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by the same control signal line; the first active layer (SC1) of the first thin film transistor (T1) and the second active layer (SC2) of the second thin film transistor (T2) are at different layers, and positioned to stack up in space, and the first source (S1) and the first drain (D1) of the first thin film transistor (T1) contact the first active layer (SC1), and the second source (S2) and the second drain (D2) of the second thin film transistor (T2) contact the second active layer (SC2); the bottom gate layer (Bottom Gate) of the first thin film transistor (T1) is positioned under the first active layer (SC1), and the top gate layer (Top Gate) of the second thin film transistor (T2) is above the second active layer (SC2).

Abstract: Related to is a liquid crystal display device, comprising: a liquid crystal display panel; a backlight module including a light guide plate having a light-emitting element, an optical diaphragm group, and a reflective plate; a glass cover covering the liquid crystal display panel and the backlight module, wherein an inner surface of the side wall of the glass cover is in contact with two side portions of the liquid crystal display panel, and two side portions of the backlight module; and a first positioning strip and a second positioning strip, respectively arranged at a top end and a bottom end of the backlight module and are both capable of being engaged with the side wall of the glass cover.

Abstract: A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.

Abstract: The present invention provides a method for manufacturing a curved liquid crystal panel, which includes Step 1: pre-setting radii of curvature of a CF substrate and an array substrate of a curved liquid crystal panel; Step 2: preparing the CF substrate (1) and the array substrate (2), the CF substrate (1) and the array substrate (2) being both in the form of a flat panel, where in step (2), a spacing distance L2 between two adjacent data lines (21) and a spacing distance L1 of black matrixes (11) in a direction in which the data lines (21) is lined up are set to be different; Step 3: individually curving the CF substrate (1) and the array substrate (2) to reach the pre-set radii of curvature of Step 1; and Step 4: subjecting the curved CF substrate (1) and array substrate (2) to vacuum lamination through curved surface lamination to be laminated together to form a curved liquid crystal panel.

Abstract: The present disclosure discloses a GOA unit for co-driving a gate electrode and a common electrode, including: a trigger; a first selective input circuit; a second selective input circuit which is used to respectively gate the high level input for common electrode and the high level input for gate electrode to the clock end of the trigger in different time sequences to pull up the voltage on the trigger output end; a third selective input circuit which is used to select level signals or edge signals on gate line n+1 and gate line n+4 to serve as the reset signal of the trigger; a fourth selective input circuit which is used to pull down the voltage thereon; a selective output circuit with the input being connected to the trigger output end, for selectively outputting a gate electrode driving signal or a common electrode driving signal.

Abstract: The liquid crystal display provided by the present invention acquires the light of linear polarization by doping the quantum-dot material in the color resist layer to excite the quantum-dots by the backlight to form the light of a certain light spectrum and cooperating with the anisotropic polarization layer manufactured by organic dye molecules for selectively allowing the light of different polarization states to pass through. The light leakage issue due to the light polarization state change caused by the quantum-dot material can be effectively solved to raise the contrast ratio. The polarization layer can be employed to replace the upper or the lower polarizer, and thus, one polarizer attachment process can be omitted to simplify the process, to save the cost and meanwhile to achieve better polarization result.

Abstract: A backlight module is disclosed. The backlight module comprises a light guide plate, a light bar unit, which comprises a first light bar and a second light bar, and a quantum tube that is arranged between the light guide plate and the light bar unit. The quantum tube comprises a first light-entering side and a second light-entering side, wherein the first light-entering side is arranged on one side of the quantum tube far from the light guide plate, and the second light-entering side is adjacent to the first light-entering side. An outside wall of the quantum tube is provided with a reflection layer at a position thereof opposite to the second light-entering side. According to the present disclosure, the deployment of the spectrum in the backlight module can be realized with the cooperation of the first light bar and the second light bar, and thus the brightness and saturation of the backlight module can both be improved.

Abstract: The present invention provides a GOA circuit based on oxide semiconductor thin film transistor. By adding the fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) respectively corresponding to the fourth, fifth, second nodes (S(N), K(N), P(N)) in the pull-down holding module (600). The fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) are controlled with the stage transfer signal of the GOA unit circuit of the former N?1th stage or the scan driving signal of the GOA unit circuit of the former N?1th stage to pull down the voltage levels of the fourth, fifth, second nodes (S(N), K(N), P(N)) under circumstance that the first node (Q(N)) is not completely boosted to rapidly deactivate the pull-down holding module (600) for ensuring the normal boost of the voltage level of the first node (Q(N)). The first node (Q(N)) is guaranteed to be high voltage level in the functioning period, and thus, the normal output of the GOA circuit is ensured.

Abstract: The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source/a first drain (61), a first gate (21), and a first etching stopper layer (51), a first oxide semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source/a second drain (62), a second gate (22), and a second oxide semiconductor layer (42), a first etching stopper layer (51), a second gate isolation layer (32) sandwiched in between. The electrical properties of the switch TFT (T1) and the drive TFT (T2) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.

Abstract: The present invention provides a manufacture method of a black matrix. The COA technology is utilized to manufacture the organic photoresist blocks with a larger thickness on the alignment marks. Then, the black matrix thin film covers on the organic photoresist blocks to tremendously increase the level differences of the positions of the alignment marks and adjacent areas. Thus, the contour recognition apparatus is employed to accurately recognize positions of the alignment marks. The issue that the alignment marks are difficult to be recognized after the black matrix thin film is coated in the BOA process can be solved.

Abstract: A TFT backplate structure and a manufacture method thereof are provided. The TFT backplate structure includes a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source electrode/a first drain electrode (61), a first gate electrode (21), and a first etching stopper layer (51), a first semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source electrode/a second drain electrode (62), a second gate electrode (22), and a second etching stopper layer (52), a second semiconductor layer (42), a second gate isolation layer (32) sandwiched in between. The materials or the thicknesses of the first gate isolation layer (31) and the second gate isolation layer (32) are different. Accordingly, the electrical properties of the switch TFT (T1) and the drive TFT (T2) are different.

Abstract: A scan driving circuit for oxide semiconductor thin film transistors includes a pull-down holding circuit part including a first pull-down holding module and a second pull-down holding module to help extend the lifetime of the circuit. The first pull-down holding module includes a first main inverter and a first auxiliary inverter introducing a constant low voltage level. The second pull-down holding module includes a second main inverter and a second auxiliary inverter introducing a constant low voltage level. The constant low voltage level is set lower than a second negative voltage level, which is in turn lower than a first negative voltage level. An influence of electrical property of the oxide semiconductor thin film transistors on the scan driving circuit, particularly poor functioning resulting from an electric leakage issue, can be prevented.

Abstract: A pixel unit is provided. The pixel unit includes a first strip main electrode extending to a first edge of the pixel unit. A first strip edge electrode of the first strip main electrode extends perpendicularly to the first edge. The present invention improves light leakage or dark lines occurring in the edge region of the pixel unit due to misalignment between an upper substrate and a lower substrate which are assembled.

Abstract: The present invention provides a curved liquid crystal display device, which includes a curved backplane (3), a light guide plate (31) arranged on the curved backplane (3), a mold frame (2) mounted to the curved backplane (3), and a liquid crystal panel (1) bonded to the mold frame (2). The curved backplane (3) is in the form of a shell, which has two opposite inside walls that are respectively provided with a plurality of raised sections (32). The mold frame (2) includes two coupling sections (21) respectively formed at two opposite sides of a top portion thereof and a plurality of recessed grooves (22) formed in two opposite sides of a bottom portion thereof and having openings facing outward. The liquid crystal panel (1) is bonded to the coupling sections (21). The plurality of raised sections (32) are respectively received and retained in the plurality of recessed grooves (22) so as to fix the mold frame (2) to the curved backplane (3).

Abstract: A backlight module includes a backplane, a mold frame, a light guide plate, and an optic film. The optic film includes a first layer and a second layer stacked on the first layer and including a constraint portion including an extension section, a connection section, and a support section parallel with and opposite to the extension section. The connection section connects between the support section and the extension section. The extension section extends from an end of the second layer. The optic film is stacked on the light guide plate with the first layer engaging the light guide plate. The mold frame surrounds the light guide plate and the first layer and is received in the backplane. The connection section is located outside opposite sides of the backplane. The mold frame and the opposite sides of the backplane are received and retained between the support section and the extension section.

Abstract: The disclosure provides a light guiding plate, used in a backlight module. The light guiding plate comprises a main board body and a sub board body. The main board body has an illuminating surface, a back surface opposite to the illuminating surface, and a first incident surface connected with the illuminating surface and the back surface. A plurality of quantum dots is uniformly embedded inside the sub board body. The sub board body is disposed on the first incident surface. The sub board body completely covers the first incident surface. The sub board body has a second incident surface, and the second incident surface is away from the first incident surface. The second incident surface is disposed opposite to a backlight source of the backlight module. The disclosure further provides a backlight module and a display.

Abstract: A device and a method for processing a waited display picture of an OLED display device are provided. The device includes a block dividing unit for dividing a waited display picture into multiple blocks; an average grayscale determining unit for determining an average grayscale value of each block; a high grayscale determining unit for determining a block having an average grayscale value greater than a preset threshold value as a high grayscale block; an adjacent grayscale determining unit for determining an adjacent grayscale value of each high grayscale block; and a regulation unit for adjusting grayscale values of pixels of each high grayscale block. The present invention adjusts grayscale values using a block as a unit. Besides, the difference of luminous efficiency or light transmittance of different color components is also considered so as to effectively improve the life of the OLED display device.