Abstract: A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

Abstract: A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.