Abstract: A VCSEL array comprises a plurality of non-isolated VCSEL emitters. Each non-isolated VCSEL emitter comprises a first reflector region, a current confining oxide layer, an oxide aperture, an active region, and a second reflector region. The current confining oxide layer and oxide aperture are made by oxidizing a relatively high Al-content layer via separate oxidation holes. The separate oxidation holes surround the oxide aperture. The first reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure, and the second reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure.

Abstract: A bottom-emitting multijunction VCSEL array includes a first reflector region, a multijunction active region, and a second reflector region. In one aspect, the multijunction VCSEL array is attached to a submount by flip-chip bonding. In another aspect, the multijunction VCSEL array further includes a contact layer formed between the first reflector region and the substrate. The multijunction VCSEL array is attached to a submount by flip-chip bonding.

Abstract: The present application relates to the technical field of optical integrated devices, and specifically discloses a semiconductor light source device of optical integrated packaging with high light extraction efficiency and low device heat generation.