Abstract: According to the present invention, there is provided a method for manufacturing single crystal based on a Czochralski method, including: analyzing Ni concentration in at least one of graphite components used in a furnace in which the single crystal is manufactured; and manufacturing the single crystal using the at least one of the graphite components when the analyzed Ni concentration is 30 ppb or less. As a result, in manufacture of the single crystal based on the Czochralski method, the method that enables manufacturing high-quality single crystal in which a reduction in LT (Life Time) or an LPD (Light Point Defect) abnormality does not occur can be provided.